Datasheet > DMN3018SSS

DMN3018SSS

更新时间： 2024-02-22 00:41:12

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	218K
描述
Low On-Resistance

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中文翻译

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数据手册

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DMN3018SSS 数据手册

DMN3018SSS

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

ESD Protected Gate

I_Dmax

V_(BR)DSS

R_DS(ON)max

T_A= 25°C

21mΩ @ V_GS= 10V

35mΩ @ V_GS= 4.5V

7.3A

5.5A

“Green” component and RoHS compliant (Notes 1 & 2)

30V

•

Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

Case: SO-8

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Backlighting

Power Management Functions

DC-DC Converters

•

Weight: 0.008 grams (approximate)

Drain

SO-8

Body

Diode

Gate

Protection

Diode

Source

ESD PROTECTED

Top View

Equivalent Circuit Per Element

Pin Configuration

Ordering Information (Note 3)

Part Number

Case

Packaging

DMN3018SSS-13

SO-8

2500/Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Logo

N3018SS

YY WW

Part no.

Xth week: 01 ~ 53

Year: “11” = 2011

1 of 6

www.diodes.com

February 2012

DMN3018SSS

Document number: DS35501 Rev. 5 - 2

12 3 4 5 6

中文翻译

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