DMN3009LFVWQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
VGSS
TC = +25°C
TC = +70°C
60
48
A
ID
Continuous Drain Current (Note 7) VGS = 10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 8)
90
60
90
33
58
A
A
IDM
IS
A
ISM
IAS
EAS
A
Avalanche Energy, L = 0.1mH (Note 8)
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
R
Value
1.0
126
Unit
W
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
JA
2.0
PD
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
62
R
JA
°C/W
°C
4.6
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
μA
nA
±100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1
—
2.5
5.0
7.4
1.2
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 30A
VGS = 4.5V, ID = 15A
VGS = 0V, IS = 1A
—
—
—
3.5
4.9
0.7
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,000
315
247
2.2
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
42
Qg
VDS = 15V, ID = 15A
4.7
7.4
3.9
4.1
31
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = 15V, VGS = 10V,
RG = 3.3Ω, ID = 15A
Turn-Off Delay Time
tD(OFF)
tF
15
Turn-Off Fall Time
15
Body Diode Reverse Recovery Time
tRR
IF = 15A, di/dt = 100A/μs
6.0
Body Diode Reverse Recovery Charge
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. IAS and EAS ratings are based on low frequency and duty cycles to keep T = +25°C.
J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2 of 7
www.diodes.com
November 2019
© Diodes Incorporated
DMN3009LFVWQ
Document number: DS41960 Rev. 2 - 2
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