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DMG4N65-TR

更新时间: 2024-09-25 01:23:11
品牌 Logo 应用领域
迪一电子 - DYELEC /
页数 文件大小 规格书
10页 2826K
描述
650V N-Channel Power MOSFET

DMG4N65-TR 数据手册

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4N65  
650V N-Channel Power MOSFET  
R
<2.4@ V =10V  
DS(ON) GS  
PRODUCT SUMMARY  
Fast switching capability  
VDS (V)  
RDS(on)()  
ID (A)  
Lead free in compliance with EU RoHS directive.  
Green molding compound  
4
650  
2.4 @ VGS =10V  
Case: TO-251,TO-252,TO-220,ITO-220  
Pin Definition:  
TO-262,TO-263 Package  
1. Gate  
2. Drain  
3. Source  
Ordering Information  
Package  
Part No.  
DMP4N65-TU  
DMD4N65-TR  
DMD4N65-TU  
DMT4N65-TU  
DMF4N65-TU  
DMK4N65-TU  
DMG4N65-TU  
DMG4N65-TR  
Packing  
75pcs / Tube  
TO-251  
TO-252  
TO-252  
TO-220  
ITO-220  
TO-262  
TO-263  
TO-263  
Block Diagram  
2.5Kpcs / 13” Reel  
75pcs / Tube  
D
50pcs / Tube  
50pcs / Tube  
G
50pcs / Tube  
50pcs / Tube  
S
800pcs / 13" Reel  
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
V
Drain-Source Voltage  
VDSS  
650  
Gate-Source Voltage  
VGSS  
±30  
V
ID  
4.0  
16  
A
A
Continuous Drain Current  
Pulsed Drain Current (Note 2)  
IDM  
Avalanche Energy  
Single Pulsed (Note 3)  
260  
106  
35  
EAS  
mJ  
W
TO-220/TO-262/TO-263  
ITO-220  
W
Power Dissipation  
PD  
TO-251/TO-252  
50  
W
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
+150  
°C  
°C  
°C  
TOPR  
TSTG  
-55 ~ +150  
-55 ~ +150  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating : Pulse width limited by maximum junction temperature  
3. L = 30mH, IAS = 3.6A, VDD = 50V, RG = 25 , Starting TJ = 25°C  
1 / 10  
May,2015-REV.00  
www.dyelec.com  

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