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DMG564010R PDF预览

DMG564010R

更新时间: 2024-02-16 15:28:32
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
6页 867K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN

DMG564010R 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:7.78其他特性:BUILT IN BIAS RESISITANCE RATIO 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):35
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.15 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMG564010R 数据手册

 浏览型号DMG564010R的Datasheet PDF文件第2页浏览型号DMG564010R的Datasheet PDF文件第3页浏览型号DMG564010R的Datasheet PDF文件第4页浏览型号DMG564010R的Datasheet PDF文件第5页浏览型号DMG564010R的Datasheet PDF文件第6页 
DMG56401  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
DMG26401 in SMini6 type package  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: E6  
Basic Part Number  
DRC2114E + DRA2114E (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
Packaging  
5: Base (Tr2)  
6: Collector (Tr1)  
SMini6-F3-B  
SC-113DB  
DMG564010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
JEITA  
Parameter  
Collector-base voltage (Emitter open)  
Tr1 Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
Code  
SOT-363  
(C1) (B2) (E2)  
50  
V
6
5
4
100  
mA  
V
R1  
R2  
Tr1  
Collector-base voltage (Emitter open)  
Tr2 Collector-emitter voltage (Base open)  
Collector current  
VCBO  
VCEO  
IC  
–50  
Tr2  
R1  
–50  
V
R2  
–100  
mA  
mW  
°C  
°C  
°C  
1
2
3
(E1) (B1) (C2)  
Total power dissipation  
PT  
150  
R1  
Tr1  
10  
10  
10  
10  
kΩ  
kΩ  
kΩ  
kΩ  
Junction temperature  
Overall  
Tj  
150  
R2  
Resistance  
value  
Operating ambient temperature  
Topr  
–40 to +85  
–55 to +150  
R1  
Tr2  
Storage temperature  
T
stg  
R2  
Publication date: November 2013  
Ver. DED  
1

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