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DMG504010R PDF预览

DMG504010R

更新时间: 2024-10-01 20:10:07
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
6页 1088K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN

DMG504010R 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:7.79最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.15 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

DMG504010R 数据手册

 浏览型号DMG504010R的Datasheet PDF文件第2页浏览型号DMG504010R的Datasheet PDF文件第3页浏览型号DMG504010R的Datasheet PDF文件第4页浏览型号DMG504010R的Datasheet PDF文件第5页浏览型号DMG504010R的Datasheet PDF文件第6页 
DMG50401  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For general amplification  
DMG20401 in SMini6 type package  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: A9  
Basic Part Number  
DSC2001 + DSA2001 (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
Panasonic  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
SMini6-F3-B  
SC-113DB  
Packaging  
DMG504010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
JEITA  
Code  
SOT-363  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr1 Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
60  
Unit  
V
(C1) (B2) (E2)  
6
5
4
50  
V
Tr1  
Tr2  
7
V
100  
mA  
mA  
V
1
2
3
Peak collector current  
ICP  
200  
(E1) (B1) (C2)  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr2 Emitter-base voltage (Collector open)  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
–60  
–50  
V
–7  
V
–100  
–200  
150  
mA  
mA  
mW  
°C  
°C  
°C  
Peak collector current  
ICP  
Total power dissipation  
PT  
Junction temperature  
Overall  
Tj  
150  
Operating ambient temperature  
Topr  
–40 to +85  
–55 to +150  
Storage temperature  
T
stg  
Publication date: February 2014  
Ver. EED  
1

DMG504010R 替代型号

型号 品牌 替代类型 描述 数据表
DMC904010R PANASONIC

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