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DMF2011-000 PDF预览

DMF2011-000

更新时间： 2024-11-28 20:44:39
品牌 Logo 应用领域
思佳讯 - SKYWORKS 二极管
页数 文件大小 规格书
22页 170K
描述
Mixer Diode, Low Barrier, X Band, 6dB Noise Figure, Silicon, ROHS COMPLIANT, CASE 488-002, 4 PIN

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DMF2011-000 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：ROHS COMPLIANT, CASE 488-002, 4 PIN
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.76配置：RING, 4 ELEMENTS
最大二极管电容：0.3 pF二极管元件材料：SILICON
二极管类型：MIXER DIODE频带：X BAND
JESD-30 代码：S-CQMW-F4湿度敏感等级：1
最大噪声指数：6 dB元件数量：4
端子数量：4最大工作频率：12 GHz
最小工作频率：8 GHz封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：SQUARE封装形式：MICROWAVE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
子类别：Microwave Mixer Diodes表面贴装：YES
技术：SCHOTTKY端子形式：FLAT
端子位置：QUAD处于峰值回流温度下的最长时间：40
肖特基势垒类型：LOW BARRIERBase Number Matches：1

DMF2011-000 数据手册

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DATA SHEET  
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer  
Diodes – Singles, Pairs & Quads, Bondable & Packaged Chips  
Applications  
x Microwave Integrated Circuits  
x Mixers  
x Detectors  
Features  
x Low 1/f noise  
x Low intermodulation distortion  
x Epoxy and hermetically sealed packages  
x Statistical Process Control wafer fabrication  
x Packages rated MSL1, 260 qC per JEDEC J-STD-020)  
Beam-lead Schottky barrier diodes are categorized by universal  
mixer applications in four frequency ranges: S, C, X, Ku, K, and Ka  
bands as noted in Table 1. They may also be used as modulators  
and high-speed switches.  
Skyworks offers lead (Pb)-free, RoHS (Restriction of  
Hazardous Substances) compliant packaging.  
Beam-lead diodes are suited for balanced mixers, due to their low  
parasitics and uniformity.  
The absolute maximum ratings of the DME, DMF, and DMJ series  
of Schottky mixer diodes are provided in Table 2. Electrical and  
physical specifications are provided in Tables 3 through 15.  
Description  
Skyworks beam-lead silicon Schottky barrier mixer diodes are  
designed for applications through 40 GHz. The beam-lead design  
reduces the problem of bonding to the very small area  
characteristic of low capacitance junctions.  
Typical performance characteristics are shown in Figures 1  
through 3. Typical mixer circuits are shown in Figure 4.  
Beam-lead Schottky barrier mixer diodes are made by the  
deposition of a suitable barrier metal on an epitaxial silicon  
substrate to form the junction. The process and choice of  
materials result in low series resistance with a narrow spread of  
capacitance values for close impedance control.  
Table 1. Frequency Table  
Frequency  
Frequency Band  
(GHz)  
A variety of forward voltages are available ranging from low values  
for low, or starved, local oscillator drive levels to high values for high  
drive, low distortion mixer applications. Beam-lead diodes are  
available in a wide range of packages. Capacitance ranges and  
series resistances are comparable with the packaged devices that  
are available up to, and including, the Ka-band. Unpackaged diodes  
are well suited for use in Microwave Integrated Circuits (MICs). The  
packaged devices are designed to be inserted as hybrid elements in  
strip, transmission line applications.  
S
C
2 to 4  
4 to 8  
X
8.2 to 12.4  
12.4 to 18.0  
18.0 to 26.5  
26.5 to 40.0  
Ku  
K
Ka  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
200725B • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • October 2, 2009  
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