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DMF2012-000 PDF预览

DMF2012-000

更新时间： 2024-11-26 20:39:31
品牌 Logo 应用领域
思佳讯 - SKYWORKS 二极管
页数 文件大小 规格书
8页 176K
描述
Mixer Diode, Low Barrier, KU Band, 6.5dB Noise Figure, Silicon, ROHS COMPLIANT, CASE 488-002, 4 PIN

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DMF2012-000 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：ROHS COMPLIANT, CASE 488-002, 4 PIN
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.75配置：RING, 4 ELEMENTS
最大二极管电容：0.15 pF二极管元件材料：SILICON
二极管类型：MIXER DIODE频带：KU BAND
JESD-30 代码：S-CQMW-F4湿度敏感等级：1
最大噪声指数：6.5 dB元件数量：4
端子数量：4最大工作频率：18 GHz
最小工作频率：12 GHz封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：SQUARE封装形式：MICROWAVE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
子类别：Microwave Mixer Diodes表面贴装：YES
技术：SCHOTTKY端子形式：FLAT
端子位置：QUAD处于峰值回流温度下的最长时间：40
肖特基势垒类型：LOW BARRIERBase Number Matches：1

DMF2012-000 数据手册

 浏览型号DMF2012-000的Datasheet PDF文件第2页浏览型号DMF2012-000的Datasheet PDF文件第3页浏览型号DMF2012-000的Datasheet PDF文件第4页浏览型号DMF2012-000的Datasheet PDF文件第5页浏览型号DMF2012-000的Datasheet PDF文件第6页浏览型号DMF2012-000的Datasheet PDF文件第7页 
Silicon Beam–Lead  
Schottky Barrier Mixer Diodes  
DME, DMF and DMJ Series  
Features  
Ideal for MIC  
Low 1/f Noise  
Low Intermodulation Distortion  
Low Turn On  
Hermetically Sealed Packages  
SPC Controlled Wafer Fabrication  
Description  
Alpha beam–lead and chip Schottky barrier mixer  
diodes are designed for applications through 40 GHz  
in Ka–band. The beam–lead design eliminates the  
problem of bonding to the very small junction area  
that is characteristic of the low capacitance involved  
in microwave devices.  
Beam–lead and chip Schottky barrier diodes are  
categorized by noise figure for mixer applications in  
four frequency ranges: S, X, Ku and Ka–bands.  
However, they can also be used as modulators, high  
speed switches and low power limiters.  
Several types of semiconductor–barrier metal  
systems are available, thus allowing proper selection  
for optimum mixer design. For most applications the  
N–type silicon, low drive types are preferable,  
especially for starved LO mixers.  
Beam–lead Schottky barrier mixer diodes are made  
by the deposition of a suitable barrier metal on an  
epitaxial silicon substrate to form the junction. The  
process and choice of materials result in low series  
resistance along with a narrow spread of capacitance  
values for close impedance control.  
Beam–lead diodes are ideally suited for balanced  
mixers, since they exhibit low parasitics and are  
extremely uniform. A typical V vs. I curve is shown  
F
F
in Figure 1. Typical noise figures vs LO drive is shown  
in Figure 2 for single N–type, low drive diode types.  
A variety of forward knees are available, ranging from  
a low value for low, or starved, local oscillator drive  
levels to a higher value for high drive, low intermode  
mixer applications. The beam–lead diodes are  
available in a wide range of packages as shown.  
Capacitance ranges and series resistances are  
comparable with the packaged devices that are  
available through K–band. The unmounted diodes  
are especially well suited for use in microwave  
integrated circuits. The mounted devices can be  
easily inserted as hybrid elements in stripline,  
microstrip or other such circuitry.  
Maximum Ratings  
Storage Temperature:  
Operating Temperature:  
Dissipated Power:  
Max Current:  
–65°C/+175°C  
–65°C/+175°C  
75 mW/Junction  
100 mA  
Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com  
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