Datasheet > DME2174-000

DME2174-000

更新时间： 2024-11-13 19:16:47

品牌	Logo	应用领域
思佳讯 - SKYWORKS		二极管
页数	文件大小	规格书
8页	176K
描述
Mixer Diode, 6.5dB Noise Figure, Silicon,

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技术参数
数据手册

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DME2174-000 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.60
风险等级：	5.84	二极管元件材料：	SILICON
二极管类型：	MIXER DIODE	最大噪声指数：	6.5 dB
最大工作频率：	26 GHz	最小工作频率：	18 GHz
子类别：	Microwave Mixer Diodes	表面贴装：	YES
Base Number Matches：	1

DME2174-000 数据手册

Silicon Beam–Lead

Schottky Barrier Mixer Diodes

DME, DMF and DMJ Series

Features

Ideal for MIC

Low 1/f Noise

Low Intermodulation Distortion

Low Turn On

Hermetically Sealed Packages

SPC Controlled Wafer Fabrication

Description

Alpha beam–lead and chip Schottky barrier mixer

diodes are designed for applications through 40 GHz

in Ka–band. The beam–lead design eliminates the

problem of bonding to the very small junction area

that is characteristic of the low capacitance involved

in microwave devices.

Beam–lead and chip Schottky barrier diodes are

categorized by noise figure for mixer applications in

four frequency ranges: S, X, Ku and Ka–bands.

However, they can also be used as modulators, high

speed switches and low power limiters.

Several types of semiconductor–barrier metal

systems are available, thus allowing proper selection

for optimum mixer design. For most applications the

N–type silicon, low drive types are preferable,

especially for starved LO mixers.

Beam–lead Schottky barrier mixer diodes are made

by the deposition of a suitable barrier metal on an

epitaxial silicon substrate to form the junction. The

process and choice of materials result in low series

resistance along with a narrow spread of capacitance

values for close impedance control.

Beam–lead diodes are ideally suited for balanced

mixers, since they exhibit low parasitics and are

extremely uniform. A typical V vs. I curve is shown

in Figure 1. Typical noise figures vs LO drive is shown

in Figure 2 for single N–type, low drive diode types.

A variety of forward knees are available, ranging from

a low value for low, or starved, local oscillator drive

levels to a higher value for high drive, low intermode

mixer applications. The beam–lead diodes are

available in a wide range of packages as shown.

Capacitance ranges and series resistances are

comparable with the packaged devices that are

available through K–band. The unmounted diodes

are especially well suited for use in microwave

integrated circuits. The mounted devices can be

easily inserted as hybrid elements in stripline,

microstrip or other such circuitry.

Maximum Ratings

Storage Temperature:

Operating Temperature:

Dissipated Power:

Max Current:

–65°C/+175°C

75 mW/Junction

100 mA

Alpha Industries • [617] 935Ć5150 • Fax [617] 824Ć4579 • E-mail sales@alphaind.com • Visit our web site: www.alphaind.com

3–12

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与DME2174-000相关器件

型号	品牌	获取价格	描述	数据表
DME2174-520-034	SKYWORKS	获取价格	Mixer Diode, Medium Barrier, K Band, Silicon
DME2178-000	SKYWORKS	获取价格	Mixer Diode, 6.5dB Noise Figure, Silicon,
DME2178-520-034	SKYWORKS	获取价格	暂无描述
DME2191-000	SKYWORKS	获取价格	Mixer Diode, 6.5dB Noise Figure, Silicon,
DME2191-520-034	SKYWORKS	获取价格	Mixer Diode, Medium Barrier, S Band, Silicon
DME2192-000	SKYWORKS	获取价格	Mixer Diode, 6.5dB Noise Figure, Silicon,
DME2192-520-034	SKYWORKS	获取价格	Mixer Diode, Medium Barrier, X Band, Silicon
DME2199	ETC	获取价格	Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes
DME2199-521-008	SKYWORKS	获取价格	Mixer Diode, Medium Barrier, S Band, Silicon, BEAM LEAD PACKAGE-4
DME2205	ETC	获取价格	Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

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