Datasheet > DME201010R

DME201010R

更新时间： 2024-09-25 21:16:23

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
6页	1084K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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DME201010R 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	7.81	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

DME201010R 数据手册

DME20101

Silicon PNP epitaxial planar type (Tr1)

Silicon NPN epitaxial planar type (Tr2)

Unit: mm

For general ampliﬁcation

 Features

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

ꢀMarking Symbol: A2

ꢀBasic Part Number

DSA2001 + DSC2001 (Common emitter)

1: Base (Tr1)

2: Emitter (Common)

3: Base (Tr2)

Panasonic

4: Collector (Tr2)

 Packaging

5: Collector (Tr1)

DME201010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

Mini5-G3-B

SC-74A

ꢀAbsolute Maximum Ratings T_a= 25°C

JEITA

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Tr1 Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

–60

Unit

Code

MO-178

(C1)

(C2)

–50

–7

–100

–200

Tr1

Tr2

Peak collector current

I_CP

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Tr2 Emitter-base voltage (Collector open)

Collector current

V_CBO

V_CEO

V_EBO

I_C

(B1) (E) (B2)

100

°C

Peak collector current

I_CP

200

Total power dissipation

P_T

300

Junction temperature

Overall

T_j

150

Operating ambient temperature

T_opr

–40 to +85

–55 to +150

Storage temperature

stg

Publication date: January 2014

Ver. DED

12 3 4 5 6

中文翻译

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