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DME20C01 PDF预览

DME20C01

更新时间: 2024-09-25 19:54:31
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
6页 627K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, MINI5-G3-B, 5 PIN

DME20C01 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:CASCADED, 2 ELEMENTS
最小直流电流增益 (hFE):210JESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

DME20C01 数据手册

 浏览型号DME20C01的Datasheet PDF文件第2页浏览型号DME20C01的Datasheet PDF文件第3页浏览型号DME20C01的Datasheet PDF文件第4页浏览型号DME20C01的Datasheet PDF文件第5页浏览型号DME20C01的Datasheet PDF文件第6页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DME20C01  
Silicon PNP epitaxial planar type (Tr1)  
Silicon NPN epitaxial planar type (Tr2)  
For general amplication  
Features  
Package  
High forward current transfer ratio hFE with excellent linearity  
Code  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Mini5-G3-B  
Pin Name  
1: Emitter (Tr1)  
2: Base (Tr1)  
Emitter (Tr2)  
3: Base (Tr2)  
4: Collector (Tr2)  
5: Collector (Tr1)  
Basic Part Number  
DSA2001 + DSC2001 (Base-emitterr connection)  
Marking Symbol: A4  
Internal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr1 Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–60  
Unit  
V
Tr2  
Tr1  
–50  
V
1
2
3
–7  
V
(E1) (B1,E2) (B2)  
–100  
–200  
60  
mA  
mA  
V
Peak collector current  
ICP  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Tr2 Emitter-base voltage (Collector open)  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
50  
V
7
V
100  
mA  
mA  
mW  
°C  
°C  
Peak collector current  
ICP  
200  
Total power dissipation  
PT  
300  
Overall Junction temperature  
Storage temperature  
Tj  
150  
T
stg  
–55 to +150  
Publication date: April 2010  
ZJJ00577BED  
1

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