5秒后页面跳转
DMC6040SSDQ PDF预览

DMC6040SSDQ

更新时间: 2023-12-06 20:10:15
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
9页 586K
描述
60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

DMC6040SSDQ 数据手册

 浏览型号DMC6040SSDQ的Datasheet PDF文件第2页浏览型号DMC6040SSDQ的Datasheet PDF文件第3页浏览型号DMC6040SSDQ的Datasheet PDF文件第4页浏览型号DMC6040SSDQ的Datasheet PDF文件第6页浏览型号DMC6040SSDQ的Datasheet PDF文件第7页浏览型号DMC6040SSDQ的Datasheet PDF文件第8页 
DMC6040SSDQ  
1
D = 0.9  
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.01  
D = 0.005  
0.01  
RJA(t) = r(t) * RJA  
RJA = 102°C/W  
Duty Cycle, D = t1/ t2  
D = Single Pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10 100  
1000  
t1, PULSE DURATION TIME (sec)  
Figure 12 Transient Thermal Resistance  
Electrical Characteristics P-Channel Q2 (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 9)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-60  
V
-1  
BVDSS  
IDSS  
VGS = 0V, ID = -250µA  
VDS = -48V, VGS = 0V  
VGS = ±16V, VDS = 0V  
µA  
nA  
100  
IGSS  
ON CHARACTERISTICS (Note 9)  
Gate Threshold Voltage  
-1  
-3  
V
mΩ  
V
91  
VGS(TH)  
RDS(ON)  
VSD  
VDS = VGS, ID = -250µA  
VGS = -10V, ID = -4.5A  
VGS = -4.5V, ID =-3.5A  
VGS = 0V, IS = -1A  
110  
130  
-1.2  
Static Drain-Source On-Resistance  
110  
-0.7  
Diode Forward Voltage  
DYNAMIC CHARACTERISTICS (Note 10)  
Input Capacitance  
1,030  
49.1  
38.7  
CISS  
COSS  
CRSS  
RG  
  
  
  
  
  
  
  
  
Output Capacitance  
pF  
VDS = -30V, VGS = 0V, f = 1.0MHz  
VDS = 0V, VGS = 0V, f = 1.0MHz  
Reverse Transfer Capacitance  
Gate Resistance  
13.6  
9.5  
Total Gate Charge (VGS = -4.5V)  
Total Gate Charge (VGS = -10V)  
Gate-Source Charge  
QG  
19.4  
2.3  
QG  
nC  
VDS = -30V, ID = -5A  
QGS  
QGD  
tD(ON)  
tR  
3.6  
Gate-Drain Charge  
3.7  
Turn-On Delay Time  
6.3  
Turn-On Rise Time  
VGS = -10V, VDS = -30V, RGEN = 6,  
ID = -5A  
ns  
58.7  
26.1  
14.85  
8.8  
Turn-Off Delay Time  
tD(OFF)  
tF  
Turn-Off Fall Time  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
tRR  
IS = -5A, dI/dt = 100A/μs  
IS = -5A, dI/dt = 100A/μs  
nC  
QRR  
Notes:  
9. Short duration pulse test used to minimize self-heating effect.  
10. Guaranteed by design. Not subject to product testing.  
5 of 9  
www.diodes.com  
April 2016  
© Diodes Incorporated  
DMC6040SSDQ  
Document number: DS38828 Rev. 1 - 2  

与DMC6040SSDQ相关器件

型号 品牌 描述 获取价格 数据表
DMC6070LND DIODES COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

获取价格

DMC6070LND-13 DIODES COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

获取价格

DMC6070LND-7 DIODES COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

获取价格

DMC60C31 DAEWOO CMOS SINGLE-COMPONENT 8-BIT MICROCOMPUTER

获取价格

DMC60C32 DAEWOO CMOS SINGLE-COMPONENT 8-BIT MICROCOMPUTER

获取价格

DMC60C51 DAEWOO CMOS SINGLE-COMPONENT 8-BIT MICROCOMPUTER

获取价格