DMC6040SSDQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * RJA
RJA = 102°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
Electrical Characteristics – P-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
V
-1
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -48V, VGS = 0V
VGS = ±16V, VDS = 0V
µA
nA
100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1
-3
V
mΩ
V
91
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID =-3.5A
VGS = 0V, IS = -1A
110
130
-1.2
Static Drain-Source On-Resistance
110
-0.7
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
1,030
49.1
38.7
CISS
COSS
CRSS
RG
Output Capacitance
pF
VDS = -30V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
13.6
9.5
Ω
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
QG
19.4
2.3
QG
nC
VDS = -30V, ID = -5A
QGS
QGD
tD(ON)
tR
3.6
Gate-Drain Charge
3.7
Turn-On Delay Time
6.3
Turn-On Rise Time
VGS = -10V, VDS = -30V, RGEN = 6Ω,
ID = -5A
ns
58.7
26.1
14.85
8.8
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
tRR
IS = -5A, dI/dt = 100A/μs
IS = -5A, dI/dt = 100A/μs
nC
QRR
Notes:
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
5 of 9
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April 2016
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DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2