DMC6040SSDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Q1
60
Q2
-60
±20
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
5.1
4.1
-3.1
-2.5
A
A
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 7) VGS = -10V
Maximum Body Diode Forward Current (Note 7)
6.5
5.2
-3.9
-3.1
t<10s
2.1
28
-2.1
-19
A
A
IS
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
IDM
IAS
17.2
14.7
-17.6
15.4
A
Avalanche Energy (Note 8) L = 0.1mH
mJ
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
1.24
0.8
101
61
1.56
1.0
TA = +25°C
TA = +70°C
Steady State
t < 10s
Total Power Dissipation (Note 6)
W
°C/W
W
PD
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
RθJA
PD
TA = +25°C
TA = +70°C
Steady State
t<10s
80
49
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
14.7
-55 to +150
RθJC
TJ, TSTG
Electrical Characteristics – N-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
V
BVDSS
IDSS
1
VGS = 0V, ID = 250µA
VDS = 48V, VGS = 0V
VGS = 20V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
nA
IGSS
100
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1
3
V
mΩ
V
33
37
0.7
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1A
40
55
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
1,130
69
CISS
COSS
CRSS
RG
Output Capacitance
pF
VDS = 15V, VGS = 0V f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
42
1.7
Ω
20.8
9.4
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
QG
QG
nC
VDS = 30V, ID = 4.3A
3.3
QGS
QGD
tD(ON)
tR
Gate-Drain Charge
3.0
Turn-On Delay Time
3.6
Turn-On Rise Time
1.8
VGS = 10V, VDD = 30V, RG = 6Ω,
ID = 4.3A
ns
Turn-Off Delay Time
20.1
4.3
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14.2
7.5
ns
tRR
IS = 4.3A, dI/dt = 100A/μs
IS = 4.3A, dI/dt = 100A/μs
nC
QRR
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. UIS in production with L = 0.1mH, starting T = +25°C.
A
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2 of 9
www.diodes.com
April 2016
© Diodes Incorporated
DMC6040SSDQ
Document number: DS38828 Rev. 1 - 2
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