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DMC6040SSDQ PDF预览

DMC6040SSDQ

更新时间: 2023-12-06 20:10:15
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
9页 586K
描述
60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

DMC6040SSDQ 数据手册

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DMC6040SSDQ  
2.2  
2
20  
18  
16  
14  
12  
10  
8
1.8  
1.6  
1.4  
1.2  
1
-I = 1mA  
D
-I = 250µA  
D
T = 150C  
A
6
T = 125C  
A
T = 25C  
A
4
T = 85C  
A
2
T = -55C  
A
0.8  
-50 -25  
0
0
25  
50  
75 100 125 150  
0
0.3  
0.6  
0.9  
1.2  
1.5  
TA, AMBIENT TEMPERATURE (°C)  
-VSD, SOURCE-DRAIN VOLTAGE (V)  
Figure 19 Gate Threshold Variation vs. Ambient Temperature  
Figure 20 Diode Forward Voltage vs. Current  
10000  
10  
8
f = 1MHz  
C
iss  
1000  
100  
6
V
I
= -30V  
DS  
= -5A  
D
4
C
oss  
2
C
rss  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
2
4
6
8
10 12 14 16 18 20  
-VDS, DRAIN-SOURCE VOLTAGE (V)  
Qg, TOTAL GATE CHARGE (nC)  
Figure 21 Typical Junction Capacitance  
Figure 22 Gate-Charge Characteristics  
100  
10  
1
R
DS(on)  
Limited  
DC  
P
= 10s  
W
P
= 1s  
W
0.1  
P
= 100ms  
W
P
= 10ms  
W
P
= 1ms  
W
T
= 150°C  
P
= 100µs  
J(max)  
0.01  
W
T
V
= 25°C  
A
= -10V  
GS  
Single Pulse  
DUT on 1 * MRP Board  
0.001  
0.1  
1
10  
100  
-VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 23 SOA, Safe Operation Area  
7 of 9  
www.diodes.com  
April 2016  
© Diodes Incorporated  
DMC6040SSDQ  
Document number: DS38828 Rev. 1 - 2  

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