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DM54LS30W/883 PDF预览

DM54LS30W/883

更新时间: 2024-11-24 14:21:11
品牌 Logo 应用领域
美国国家半导体 - NSC 输入元件逻辑集成电路触发器
页数 文件大小 规格书
6页 12K
描述
IC LS SERIES, 8-INPUT NAND GATE, CDFP14, Gate

DM54LS30W/883 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DFP, FL14,.3Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.22
系列:LSJESD-30 代码:R-GDFP-F14
JESD-609代码:e0负载电容(CL):15 pF
逻辑集成电路类型:NAND GATE最大I(ol):0.004 A
功能数量:1输入次数:8
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DFP封装等效代码:FL14,.3
封装形状:RECTANGULAR封装形式:FLATPACK
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
最大电源电流(ICC):1.1 mAProp。Delay @ Nom-Sup:20 ns
传播延迟(tpd):38 ns认证状态:Not Qualified
施密特触发器:NO筛选级别:38535Q/M;38534H;883B
座面最大高度:2.032 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:TTL温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6.2865 mm
Base Number Matches:1

DM54LS30W/883 数据手册

 浏览型号DM54LS30W/883的Datasheet PDF文件第2页浏览型号DM54LS30W/883的Datasheet PDF文件第3页浏览型号DM54LS30W/883的Datasheet PDF文件第4页浏览型号DM54LS30W/883的Datasheet PDF文件第5页浏览型号DM54LS30W/883的Datasheet PDF文件第6页 
MICROCIRCUIT DATA SHEET  
Original Creation Date: 04/22/98  
Last Update Date: 06/16/98  
MNDM54LS30-X REV 1A0  
Last Major Revision Date: 04/22/98  
8-INPUT NAND GATE  
General Description  
This device contains a single gate which performs the logic NAND function.  
Industry Part Number  
NS Part Numbers  
54LS30  
DM54LS30E/883  
DM54LS30J/883  
DM54LS30W/883  
Prime Die  
L030  
Processing  
Subgrp Description  
Temp (oC)  
MIL-STD-883, Method 5004  
1
Static tests at  
+25  
2
Static tests at  
+125  
-55  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
+25  
Quality Conformance Inspection  
5
+125  
-55  
6
MIL-STD-883, Method 5005  
7
+25  
8A  
8B  
9
+125  
-55  
+25  
10  
11  
+125  
-55  
1

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