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DM54LS20E/883 PDF预览

DM54LS20E/883

更新时间: 2024-02-10 05:09:20
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 逻辑集成电路
页数 文件大小 规格书
6页 16K
描述
NAND Gate, LS Series, 2-Func, 4-Input, TTL, CQCC20, LCC-20

DM54LS20E/883 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:QCCN, LCC20,.35SQReach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.41
系列:LSJESD-30 代码:S-CQCC-N20
JESD-609代码:e0长度:8.89 mm
逻辑集成电路类型:NAND GATE最大I(ol):0.004 A
功能数量:2输入次数:4
端子数量:20最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC20,.35SQ
封装形状:SQUARE封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
最大电源电流(ICC):2.2 mAProp。Delay @ Nom-Sup:15 ns
传播延迟(tpd):24 ns认证状态:Not Qualified
施密特触发器:NO筛选级别:38535Q/M;38534H;883B
座面最大高度:1.905 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:TTL温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.89 mm

DM54LS20E/883 数据手册

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MICROCIRCUIT DATA SHEET  
Original Creation Date: 04/22/98  
Last Update Date: 06/16/98  
MNDM54LS20-X REV 1A0  
Last Major Revision Date: 04/22/98  
DUAL 4-INPUT NAND GATE  
General Description  
This device contains two independent gates, each of which performs the logic NAND  
function.  
Industry Part Number  
NS Part Numbers  
54LS20  
DM54LS20E/883  
DM54LS20J/883  
DM54LS20W/883  
Prime Die  
L020  
Processing  
Subgrp Description  
Temp (oC)  
MIL-STD-883, Method 5004  
1
Static tests at  
+25  
2
Static tests at  
+125  
-55  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
+25  
Quality Conformance Inspection  
5
+125  
-55  
6
MIL-STD-883, Method 5005  
7
+25  
8A  
8B  
9
+125  
-55  
+25  
10  
11  
+125  
-55  
1

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