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DG303B PDF预览

DG303B

更新时间: 2024-01-13 12:48:04
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
9页 63K
描述
CMOS Analog Switches

DG303B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:0.300 INCH, CERAMIC, DIP-14针数:14
Reach Compliance Code:not_compliantHTS代码:8542.39.00.01
风险等级:5.03Is Samacsys:N
模拟集成电路 - 其他类型:SPDTJESD-30 代码:R-GDIP-T14
JESD-609代码:e0长度:19.43 mm
负电源电压最大值(Vsup):-18 V负电源电压最小值(Vsup):-5 V
标称负供电电压 (Vsup):-15 V信道数量:2
功能数量:2端子数量:14
标称断态隔离度:62 dB最大通态电阻 (Ron):50 Ω
最高工作温度:70 °C最低工作温度:
输出:SEPARATE OUTPUT封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15 V
认证状态:Not Qualified座面最大高度:5.08 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):18 V
最小供电电压 (Vsup):5 V标称供电电压 (Vsup):15 V
表面贴装:NO最长断开时间:250 ns
最长接通时间:300 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

DG303B 数据手册

 浏览型号DG303B的Datasheet PDF文件第2页浏览型号DG303B的Datasheet PDF文件第3页浏览型号DG303B的Datasheet PDF文件第4页浏览型号DG303B的Datasheet PDF文件第5页浏览型号DG303B的Datasheet PDF文件第6页浏览型号DG303B的Datasheet PDF文件第7页 
DG300B/301B/302B/303B  
Vishay Siliconix  
CMOS Analog Switches  
FEATURES  
BENEFITS  
APPLICATIONS  
D Analog Signal Range: "15 V  
D Fast Switching—tON: 150 ns  
D Low On-Resistance—rDS(on): 30 ꢀ  
D Single Supply Operation  
D Latch-up Proof  
D Full Rail-to-Rail Analog Signal Range D Low Level Switching Circuits  
D Low Signal Error  
D Programmable Gain Amplifiers  
D Low Power Dissipation  
D Portable and Battery Powered Systems  
D CMOS Compatible  
DESCRIPTION  
The DG300B-DG303B family of monolithic CMOS switches  
feature three switch configuration options (SPST, SPDT, and  
DPST) for precision applications in communications,  
instrumentation and process control, where low leakage  
switching combined with low power consumption are required.  
In the on condition the switches conduct equally well in both  
directions (with no offset voltage) and minimize error  
conditions with their low on-resistance.  
Featuring low power consumption (3.5 mW typ) these  
switches are ideal for battery powered applications, without  
sacrificing switching speed. Designed for break-before-make  
switching action, these devices are CMOS and quasi TTL  
compatible. Single supply operation is allowed by connecting  
the V– rail to 0 V.  
Designed on the Vishay Siliconix PLUS-40 CMOS process,  
these switches are latch-up proof, and are designed to block  
up to 30 V peak-to-peak when off. An epitaxial layer prevents  
latchup.  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG300B  
Plastic DIP  
TRUTH TABLE  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
NC  
V+  
Logic  
Switch  
D
1
D
2
0
OFF  
NC  
NC  
1
ON  
S
S
2
1
Logic “0” v 0.8 V  
Logic “1” w 4 V  
NC  
NC  
IN  
IN  
1
2
GND  
8
V–  
Top View  
Document Number: 71402  
S-02968—Rev. A, 22-Jan-01  
www.vishay.com  
1

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