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DG303BDJ-E3 PDF预览

DG303BDJ-E3

更新时间: 2024-11-16 10:03:31
品牌 Logo 应用领域
威世 - VISHAY 开关
页数 文件大小 规格书
14页 205K
描述
CMOS Analog Switches

DG303BDJ-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP14,.3针数:14
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:1.12模拟集成电路 - 其他类型:SPDT
JESD-30 代码:R-PDIP-T14JESD-609代码:e3
长度:18.285 mm湿度敏感等级:1
标称负供电电压 (Vsup):-15 V信道数量:1
功能数量:2端子数量:14
标称断态隔离度:62 dB最大通态电阻 (Ron):50 Ω
最高工作温度:85 °C最低工作温度:-40 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15 V
认证状态:Not Qualified座面最大高度:5.08 mm
子类别:Multiplexer or Switches标称供电电压 (Vsup):15 V
表面贴装:NO切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

DG303BDJ-E3 数据手册

 浏览型号DG303BDJ-E3的Datasheet PDF文件第2页浏览型号DG303BDJ-E3的Datasheet PDF文件第3页浏览型号DG303BDJ-E3的Datasheet PDF文件第4页浏览型号DG303BDJ-E3的Datasheet PDF文件第5页浏览型号DG303BDJ-E3的Datasheet PDF文件第6页浏览型号DG303BDJ-E3的Datasheet PDF文件第7页 
DG300B, DG301B, DG302B, DG303B  
Vishay Siliconix  
CMOS Analog Switches  
DESCRIPTION  
FEATURES  
The DG300B, DG303B family of monolithic CMOS switches  
feature three switch configuration options (SPST, SPDT,  
and DPST) for precision applications in communications,  
instrumentation and process control, where low leakage  
switching combined with low power consumption are  
required.  
Analog signal range: 1ꢀ V  
Fast switching - tON: 1ꢀ0 ns  
Low on-resistance - RDS(on): 30  
Single supply operation  
Latch-up proof  
CMOS compatible  
Designed on the Vishay Siliconix PLUS-40 CMOS process,  
these switches are latch-up proof, and are designed to block  
up to 30 V peak-to-peak when off. An epitaxial layer prevents  
latchup.  
BENEFITS  
Full rail-to-rail analog signal range  
In the on condition the switches conduct equally well in both  
directions (with no offset voltage) and minimize error  
conditions with their low on-resistance.  
Low signal error  
Low power dissipation  
Featuring low power consumption (3.ꢀ mW typ.) these  
switches are ideal for battery powered applications,  
without sacrificing switching speed. Designed for  
break-before-make switching action, these devices are  
CMOS and quasi TTL compatible. Single supply operation is  
allowed by connecting the V- rail to 0 V.  
APPLICATIONS  
Low level switching circuits  
Programmable gain amplifiers  
Portable and battery powered systems  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG300B  
Plastic DIP  
DG301B  
Plastic DIP  
1
2
3
4
6
7
14  
13  
12  
11  
10  
9
NC  
V+  
NC  
D
V+  
1
2
3
4
6
7
14  
13  
12  
11  
10  
9
D
2
D
1
D
2
1
NC  
S
NC  
NC  
NC  
S
2
S
1
S
2
1
NC  
IN  
NC  
IN  
NC  
IN  
NC  
NC  
V-  
1
2
GND  
8
V-  
GND  
8
Top View  
Top View  
TRUTH TABLE  
TRUTH TABLE  
Logic  
Switch  
OFF  
Logic  
SW1  
OFF  
ON  
SW2  
ON  
0
1
0
1
ON  
OFF  
Logic “0” 0.8 V  
Logic “1” 4 V  
Logic “0” 0.8 V  
Logic “1” 4 V  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 71402  
S11-0303-Rev. C, 28-Feb-11  
www.vishay.com  
1

DG303BDJ-E3 替代型号

型号 品牌 替代类型 描述 数据表
DG303BDJ VISHAY

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