Datasheet > DF6S25P3NU

DF6S25P3NU

更新时间： 2024-11-22 14:56:55

品牌	Logo	应用领域
东芝 - TOSHIBA		电视
页数	文件大小	规格书
8页	375K
描述
Unidirectional TVS Diode (ESD Protection Diode), 21 V, SOD-323(USC)

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DF6S25P3NU 数据手册

DF6S25P3NU

ESD Protection Diodes Silicon Epitaxial Planar

DF6S25P3NU

1. General

The DF6S25P3NU is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device

interfaces and other applications to protect against static electricity and noise.

The DF6S25P3NU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning

stroke and the transition voltage (at the time of power activation).

Furthermore, the DF6S25P3NU is housed in an ultra-compact package (2.0 mm × 2.0 mm) to meet applications

that require a small footprint.

2. Applications

Mobile Equipment

� Smartphones

� Tablets

� Notebook PCs

Desktop PCs

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

3. Features

(1) Suitable for use with a 20 V signal line. (VRWM ≤ 22 V)

(2) Protects devices with its high ESD performance.

(VESD = ±30 kV (Contact / Air) @IEC61000-4-2)

(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.

(RDYN = 0.01 Ω (typ.))

(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.

(VC = 42 V@IPP = 110 A (typ.))

(5) Compact package is suitable for use in high density board layouts such as in mobile devices.

(2.0 mm × 2.0 mm size (Nickname: UDFN6B))

4. Packaging and Pin Assignment

1: Cathode

2: Cathode

3: Anode

4: Anode

5: Cathode

6: Cathode

UDFN6B

Start of commercial production

2022-12

2022-12-26

Rev.1.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7 8

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