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Datasheet > DF5A3.6FU(TE85LF)
DF5A3.6FU(TE85LF) PDF预览

DF5A3.6FU(TE85LF)

更新时间： 2024-09-22 21:14:07
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 169K
描述
Zener Diode

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中文翻译

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DF5A3.6FU(TE85LF) 技术参数

生命周期：End Of LifeReach Compliance Code：unknown
Factory Lead Time：12 weeks风险等级：5.72
二极管类型：ZENER DIODEBase Number Matches：1

DF5A3.6FU(TE85LF) 数据手册

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DF5A3.6FU  
TOSHIBA Diodes for Protecting against ESD  
DF5A3.6FU  
Product for Use Only as Protection against Electrostatic  
Discharge (ESD)  
Unit: mm  
* This product is for protection against electrostatic discharge (ESD) only  
and is not intended for any other usage, including without limitation,  
the constant voltage diode application.  
z The mounting of four devices on an ultra-compact package allows the  
number of parts and the mounting cost to be reduced.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
200  
125  
mW  
°C  
1.Cathode 1  
2. Anode  
Junction temperature  
T
j
3.Cathode2  
4.Cathode3  
5.Cathode4  
Storage temperature range  
T
−55 to 125  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
JEDEC  
JEITA  
⎯
⎯
TOSHIBA  
1-2V1B  
Weight: 0.0062g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
Z
I
I
= 5 mA  
= 5 mA  
3.4  
―
3.6  
―
3.8  
130  
10  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
I
V
V
= 1 V  
―
―
μA  
R
R
R
Terminal capacitance  
(between Cathode and Anode)  
C
T
―
110  
―
pF  
= 0 V, f = 1 MHz  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 30 kV  
Criterion: No damage to device elements  
Start of commercial production  
2004-02  
1
2014-03-01  
123

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