Datasheet > DF11MR12W1M1_B11

DF11MR12W1M1_B11

更新时间： 2023-09-03 20:28:22

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	580K
描述
PressFIT

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中文翻译

获取价格

数据手册

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DF11MR12W1M1_B11 数据手册

DF11MR12W1M1_B11

VorläufigeꢀDaten

PreliminaryꢀData

NTC-Widerstandꢀ/ꢀNTC-Thermistor

CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues

min. typ. max.

Nennwiderstand

Ratedꢀresistance

T_NTC= 25°C

R₂₅

5,00

kΩ

AbweichungꢀvonꢀR100

DeviationꢀofꢀR100

T_NTC= 100°C, R₁₀₀= 493 Ω

∆R/R

P₂₅

-5

Verlustleistung

Powerꢀdissipation

T_NTC= 25°C

20,0 mW

B-Wert

B-value

R₂= R₂₅exp [B_25/50(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/80(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/100(1/T₂- 1/(298,15 K))]

B_25/50

B_25/80

B_25/100

3375

3411

3433

B-Wert

B-value

B-Wert

B-value

AngabenꢀgemäßꢀgültigerꢀApplicationꢀNote.

Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.

Modulꢀ/ꢀModule

Isolations-Prüfspannung

Isolationꢀtestꢀvoltage

RMS, f = 50 Hz, t = 1 min.

V_ISOL

ꢀ

3,0

ꢀ kV

ꢀ

InnereꢀIsolation

Internalꢀisolation

Basisisolierungꢀ(Schutzklasseꢀ1,ꢀEN61140)

basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)

Al₂O₃

Kriechstrecke

Creepageꢀdistance

Kontaktꢀ-ꢀKühlkörperꢀ/ꢀterminalꢀtoꢀheatsink

Kontaktꢀ-ꢀKontaktꢀ/ꢀterminalꢀtoꢀterminal

11,5

6,3

ꢀ mm

ꢀ

Luftstrecke

Clearance

Kontaktꢀ-ꢀKühlkörperꢀ/ꢀterminalꢀtoꢀheatsink

Kontaktꢀ-ꢀKontaktꢀ/ꢀterminalꢀtoꢀterminal

10,0

5,0

VergleichszahlꢀderꢀKriechwegbildung

Comperativeꢀtrackingꢀindex

CTI

RTI

> 200

RelativerꢀTemperaturindexꢀ(elektr.)

RTIꢀElec.

Gehäuse

housing

140

ꢀ °C

min. typ. max.

Modulstreuinduktivität

Strayꢀinductanceꢀmodule

L_sCE

T_stg

°C

Lagertemperatur

Storageꢀtemperature

-40

125

Anpresskraft für mech. Bef. pro Feder

mountig force per clamp

Gewicht

Weight

The current under continuous operation is limited to 25 A rms per connector pin.

Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design

guidelines described in Application Note AN 2018-09 must be considered to ensure sound operation of the device over the planned lifetime.

Datasheet

Vꢀ2.3

2018-12-17

1 2 3 456 7 8...10

中文翻译

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