DF01S-T

更新时间： 2024-09-15 13:07:19

品牌	Logo	应用领域
美台 - DIODES		整流二极管桥式整流二极管光电二极管 PC
页数	文件大小	规格书
3页	99K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

DF01S-T 数据手册

DF005M - DF10M

1.0A GLASS PASSIVATED BRIDGE RECTIFIERS

Features

•

Glass Passivated Die Construction

Low Forward Voltage Drop, High Current Capability

Surge Overload Rating to 50A Peak

Designed for Printed Circuit Board Applications

UL Listed Under Recognized Component Index, File

Number E94661

DF-M

Dim

Min

7.40

6.20

0.22

1.27

7.60

3.81

8.13

2.40

5.00

0.46

Max

7.90

6.50

0.30

2.03

8.90

4.69

8.51

3.40

5.20

0.58

B A

•

Lead Free Finish, RoHS Compliant (Date Code 0532+)

(Note 3)

Mechanical Data

•

Case: DF-M

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish - Tin. Solder Plated Leads,

Solderable per MIL-STD-202, Method 208

Polarity: As Marked on Case

Marking Information: Type Number, See Page 3

Weight: 0.38 grams (approximate)

•

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

@T_A= 25°C unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

005M

01M

02M

04M

06M

08M

10M

Characteristic

Symbol

Unit

V_RMM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

200

140

400

600

420

800

580

1000

700

RMS Reverse Voltage

280

1.0

V_RMS

I_O

I_FSM

V_FM

Average Rectified Output Current

@ T_A= 40°C

@ I_F= 1.0 A

Non-Repetitive Peak Forward Surge Current, 8.3 ms

Single Half Sine-Wave Superimposed on Rated Load

1.1

Forward Voltage (per element)

Peak Reverse Current

at Rated DC Blocking Voltage (per element)

I²t Rating for Fusing (t<8.3ms)

@ T_A= 25°C

@ T_A= 125°C

500

µA

A²s

I_RM

I²t

10.4

Typical Total Capacitance per element

Typical Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

(Note 1)

(Note 2)

C_T

°C/W

°C

R_θ

-65 to +150

T_j, T_STG

Notes:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Thermal Resistance, junction to ambient, measured on PC board with 5.0mm²(0.03mm thick) land areas.

3. RοHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.

DS21201 Rev. 15 - 2

DF005M-DF10M

1 of 3

www.diodes.com

12 3

中文翻译

下载PDF

DF01S-T 替代型号

型号	品牌	替代类型	描述	数据表
DF06S-T	DIODES	完全替代	暂无描述
DF01S	DIODES	完全替代	1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
DF04S-T	DIODES	功能相似	Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DF-S,

与DF01S-T相关器件

型号	品牌	获取价格	描述	数据表
DF01S-T3	WTE	获取价格	1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
DF01S-TF	DIODES	获取价格	1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
DF01S-T-F	DIODES	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, PLASTIC, DF-S, 4 PIN
DF01ST-G	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
DF01ST-HF	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
DF01STR16	INFINEON	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, SURFACE MOUNT, DIP-4
DF01STR16	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, SURFACE MOUNT, DIP-4
DF01STRR16	INFINEON	获取价格	暂无描述
DF01STRR16	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, SURFACE MOUNT PACKAGE-4
DF02	LRC	获取价格	1.0A DIP & SMD BRIDGE RECTIFIERS

与DF01S-T相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

4
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

4
SL74HC10N：高性能三输入与非门解析
2024-09-03

83
AIC1781A 电池充电控制器深度解析
2024-09-03

75

产品中心

服务支持

精选活动

关于我们

帮助中心

DF01S-T

DF01S-T 数据手册

DF01S-T 替代型号

与DF01S-T相关器件

与DF01S-T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DF01S-T

DF01S-T 数据手册

DF01S-T 替代型号

与DF01S-T相关器件

与DF01S-T相关文章

您还可以找

您在本页遇到什么问题？