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DF01S-T PDF预览

DF01S-T

更新时间: 2024-11-30 13:07:19
品牌 Logo 应用领域
美台 - DIODES 整流二极管桥式整流二极管光电二极管PC
页数 文件大小 规格书
3页 99K
描述
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DF01S-T 数据手册

 浏览型号DF01S-T的Datasheet PDF文件第2页浏览型号DF01S-T的Datasheet PDF文件第3页 
DF005M - DF10M  
1.0A GLASS PASSIVATED BRIDGE RECTIFIERS  
Features  
Glass Passivated Die Construction  
Low Forward Voltage Drop, High Current Capability  
Surge Overload Rating to 50A Peak  
Designed for Printed Circuit Board Applications  
UL Listed Under Recognized Component Index, File  
Number E94661  
DF-M  
C
Dim  
A
Min  
7.40  
6.20  
0.22  
1.27  
7.60  
3.81  
8.13  
2.40  
5.00  
0.46  
Max  
7.90  
6.50  
0.30  
2.03  
8.90  
4.69  
8.51  
3.40  
5.20  
0.58  
B A  
E
B
Lead Free Finish, RoHS Compliant (Date Code 0532+)  
(Note 3)  
C
D
Mechanical Data  
H
K
E
Case: DF-M  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish - Tin. Solder Plated Leads,  
Solderable per MIL-STD-202, Method 208  
Polarity: As Marked on Case  
Marking Information: Type Number, See Page 3  
Weight: 0.38 grams (approximate)  
D
G
H
J
J
G
L
K
L
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics  
@TA = 25°C unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
DF  
005M  
DF  
01M  
DF  
02M  
DF  
04M  
DF  
06M  
DF  
08M  
DF  
10M  
Characteristic  
Symbol  
Unit  
VRMM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
580  
1000  
700  
V
RMS Reverse Voltage  
280  
1.0  
50  
V
A
A
V
VRMS  
IO  
IFSM  
VFM  
Average Rectified Output Current  
@ TA = 40°C  
@ IF = 1.0 A  
Non-Repetitive Peak Forward Surge Current, 8.3 ms  
Single Half Sine-Wave Superimposed on Rated Load  
1.1  
Forward Voltage (per element)  
Peak Reverse Current  
at Rated DC Blocking Voltage (per element)  
I2t Rating for Fusing (t<8.3ms)  
@ TA = 25°C  
@ TA = 125°C  
10  
500  
µA  
A2s  
pF  
IRM  
I2t  
10.4  
25  
Typical Total Capacitance per element  
Typical Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
(Note 1)  
(Note 2)  
CT  
40  
°C/W  
°C  
Rθ  
JA  
-65 to +150  
Tj, TSTG  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal Resistance, junction to ambient, measured on PC board with 5.0mm2 (0.03mm thick) land areas.  
3. RοHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.  
DS21201 Rev. 15 - 2  
DF005M-DF10M  
© Diodes Incorporated  
1 of 3  
www.diodes.com  

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完全替代

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完全替代

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