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DF01S PDF预览

DF01S

更新时间: 2024-11-28 22:40:31
品牌 Logo 应用领域
美台 - DIODES 二极管光电二极管PC
页数 文件大小 规格书
2页 56K
描述
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

DF01S 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:23 weeks风险等级:1.46
其他特性:UL RECOGNIZED最小击穿电压:100 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Bridge Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40

DF01S 数据手册

 浏览型号DF01S的Datasheet PDF文件第2页 
DF005S - DF10S  
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE  
RECTIFIER  
Features  
·
·
·
Glass Passivated Die Construction  
Diffused Junction  
Low Forward Voltage Drop, High Current  
Capability  
DF-S  
·
·
·
Surge Overload Rating to 50A Peak  
L
Dim  
A
Min  
7.40  
6.20  
0.22  
0.076  
Max  
7.90  
6.50  
0.30  
0.33  
10.40  
1.53  
8.51  
2.60  
5.20  
1.20  
G
Designed for Surface Mount Application  
Plastic Material - UL Flammability  
Classification 94V-0  
B
C
A B  
D E  
·
UL Listed Under Recognized Component Index,  
File Number E94661  
D
E
G
H
1.02  
8.13  
2.40  
5.00  
1.00  
Mechanical Data  
H
C
·
·
Case: Molded Plastic  
J
J
Terminals: Solder Plated Leads, Solderable  
per MIL-STD-202, Method 208  
K
K
L
·
·
·
·
Polarity: As marked on Case  
Approx. Weight: 0.38 grams  
Mounting Position: Any  
All Dimensions in mm  
Marking: Type Number  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
DF  
005S  
DF  
DF  
02S  
DF  
04S  
DF  
06S  
DF  
08S  
DF  
10S  
Characteristic  
Symbol  
Unit  
01S  
100  
70  
VRMM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VRMS  
IO  
RMS Reverse Voltage  
35  
280  
1.0  
V
A
Average Forward Rectified Current  
@ TA = 40°C  
Non-Repetitive Peak Forward Surge Current, 8.3 ms  
single half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
50  
A
Forward Voltage (per element)  
@ IF = 1.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current at Rated  
DC Blocking Voltage (per element)  
@ TA = 25°C  
@ TA = 125°C  
10  
500  
µA  
I2t Rating for Fusing (t<8.3ms)  
I2t  
Cj  
10.4  
25  
A2s  
pF  
Typical Junction Capacitance (per element) (Note 1)  
Typical Thermal Resistance, Junction to Ambient  
(Note 2)  
RqJA  
40  
°C/W  
°C  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.  
2
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.  
DS17001 Rev. H-2  
1 of 2  
DF005S-DF10S  

DF01S 替代型号

型号 品牌 替代类型 描述 数据表
DF06S-T DIODES

完全替代

暂无描述
DF04S-T DIODES

完全替代

Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DF-S,
DF01S-T DIODES

完全替代

暂无描述

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