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DF01M-E3 PDF预览

DF01M-E3

更新时间: 2024-11-27 19:44:35
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 98K
描述
DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode

DF01M-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDIP-T4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.03其他特性:UL RECOGNIZED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PDIP-T4JESD-609代码:e3
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DF01M-E3 数据手册

 浏览型号DF01M-E3的Datasheet PDF文件第2页浏览型号DF01M-E3的Datasheet PDF文件第3页 
DF005M thru DF10M  
VISHAY  
Vishay Semiconductors  
Miniature Glass Passivated Single-Phase Bridge Rectifiers  
Case Style DFM  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1 A  
50 V to 1000 V  
50 A  
5 µA  
~
VF  
1.1 V  
~
Tj max.  
150 °C  
~
~
Features  
Mechanical Data  
• UL Recognition, file number E54214  
Case: DFM  
• Ideal for printed circuit boards  
Epoxy meets UL-94V-0 Flammability rating  
• Applicable for automative insertion  
• High surge current capability  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and MIL-STD-750, Method  
2026  
• Meets MSL level 1, per J-STD-020C  
Polarity: As marked on body  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for SMPS, Lighting Ballaster, Adapter, Bat-  
tery Charger, Home Appliances, Office Equipment,  
and Telecommunication applications  
Maximum Ratings  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
DF  
DF  
DF  
DF  
DF  
DF  
DF  
Unit  
005M  
01M  
02M  
04M  
06M  
08M  
10M  
Device Marking Code  
DF005 DF01 DF02 DF04 DF06 DF08 DF10  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
A
Maximum DC blocking voltage  
100  
1000  
Max. average forward output rectified current at TA= 40 °C  
IF(AV)  
IFSM  
Peak forward surge current single sine-wave  
superimposed on rated load  
50  
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
10  
Operating junction and storage temperature range  
TJ,TSTG  
-55 to +150  
Document Number 88571  
19-Nov-04  
www.vishay.com  
1

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