DF005 THRU DF10
GLASS PASSIVATED BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
FEATURES
DF-M
●
Plastic package used has Underwriters
Laboratory Flammability Classification 94V-0
Glass passivated chip junction
.335(8.5)
.307(7.8)
●
●
●
.031(0.8)
.023(0.6)
.256(6.5)
.244(6.2)
High surge overload rating of 50 Amperes peak
High temperature soldering guaranteed:
260°C/10 seconds, at 5 lbs. (2.3kg) tension
.350(8.9)
.311(7.9)
.323(8.2)
.315(8.0)
MECHANICAL DATA
.079(2.0)
.059(1.5)
.102(2.6)
.089(2.2)
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Case: Molded plastic body over passivated junctions
●
Terminals: Plated leads solderable per MIL-STD-750
Method 2026
.193(4.9)
.165(4.2)
.022(0.55)
.018(0.45)
.205(5.2)
.197(5.0)
1
2
3
4
●
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Mounting Position: Any
Weight: 0.014 oz., 0.4 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
DF08
800
DF10
1000
700
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
DF04
400
280
400
1.0
SYMBOL
DF005
50
DF01
100
70
DF02
200
DF06
600
UNITS
V
RRM
RMS
V
V
V
V
420
560
35
140
V
DC
50
200
100
600
800
1000
Maximum Average Forward Output Current at T
A
=
40oC
IO
A
A
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum DC Forward Voltage Drop per Bridge
Element at 1.0A DC
I
FSM
50
V
F
1.1
V
Maximum Reverse Current at rated
10.0
@T
A
A
= 25oC
= 125oC
I
R
µA
DC Blocking Voltage per element
@T
500
10
I2t Rating for Fusing (t<8.3ms)
I2t
A2Sec
pF
0C/W
Typical Junction Capacitance ( Note1)
Typical Thermal Resistance (Note 2)
C
J
25
40
RθJ A
T
J,
T
STG
-55 to + 150
0 C
Operating and Storage Temperature Range
NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.