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DDTC114TE-7 PDF预览

DDTC114TE-7

更新时间: 2024-11-25 22:16:51
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
3页 72K
描述
NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR

DDTC114TE-7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:7.68
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):235极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DDTC114TE-7 数据手册

 浏览型号DDTC114TE-7的Datasheet PDF文件第2页浏览型号DDTC114TE-7的Datasheet PDF文件第3页 
DDTC (R1-ONLY SERIES) E  
NPN PRE-BIASED SMALL SIGNAL SOT-523  
SURFACE MOUNT TRANSISTOR  
Features  
A
·
·
Epitaxial Planar Die Construction  
Complementary PNP Types Available  
(DDTA)  
C
SOT-523  
C
B
TOP VIEW  
Dim Min Max Typ  
·
Built-In Biasing Resistor, R1 only  
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
E
B
Mechanical Data  
G
H
·
·
·
·
Case: SOT-523, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
¾
¾
0.50  
K
J
M
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
L
D
·
·
Terminal Connections: See Diagram  
Marking: Date Code and Marking Code  
(See Diagrams & Page 2)  
K
L
M
N
a
·
·
Weight: 0.002 grams (approx.)  
Ordering Information (See Page 2)  
C
R1  
0°  
8°  
¾
B
All Dimensions in mm  
P/N  
R1 (NOM)  
MARKING  
DDTC113TE  
DDTC123TE  
DDTC143TE  
DDTC114TE  
DDTC124TE  
DDTC144TE  
DDTC115TE  
DDTC125TE  
1KW  
2.2KW  
4.7KW  
10KW  
22KW  
47KW  
100KW  
200KW  
N01  
N03  
N07  
N12  
N16  
N19  
N23  
N25  
E
SCHEMATIC DIAGRAM  
@ TA = 25°C unless otherwise specified  
Characteristic Symbol  
Maximum Ratings  
Value  
Unit  
V
VCBO  
VCEO  
Collector-Base Voltage  
50  
Collector-Emitter Voltage  
50  
5
V
VEBO  
Emitter-Base Voltage  
V
IC (Max)  
Pd  
Collector Current  
100  
mA  
mW  
°C/W  
°C  
Power Dissipation  
150  
RqJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage and Temperature Range  
833  
Tj, TSTG  
-55 to +150  
Note:  
1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30315 Rev. 2 - 2  
1 of 3  
DDTC (R1-ONLY SERIES) E  

DDTC114TE-7 替代型号

型号 品牌 替代类型 描述 数据表
DDTC114TE-7-F DIODES

完全替代

NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
DDTC114TE-7 DIODES

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NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC