是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.37 | Is Samacsys: | N |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
DDC114EU-7 | DIODES |
类似代替 |
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DDC114IRTCR | TI |
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Quad Current Input, 20-Bit Analog-To-Digital Converter | |
DDC114IRTCT | TI |
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Quad Current Input, 20-Bit Analog-To-Digital Converter | |
DDC114TH | DIODES |
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NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR | |
DDC114TH-7 | DIODES |
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NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR | |
DDC114TK | DIODES |
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NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR | |
DDC114TK-7 | DIODES |
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NPN PRE-BIASED SMALL SIGNAL SOT-26 DUAL SURFACE MOUNT TRANSISTOR | |
DDC114TK-7-F | DIODES |
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暂无描述 | |
DDC114TU | DIODES |
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NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR | |
DDC114TU-13 | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC | |
DDC114TU-13-F | DIODES |
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Transistor |