Technische Information / Technical Information
IGBT-Module
IGBT-Modules
DD 800 S 33 K2
Datenblatt
datasheet
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
VR
V
Periodische Spitzensperrspannung
3300
3300
Tj = 25°C
Tj = -25°C
repetitive peak reverse voltage
Dauergleichstrom
DC forward current
IF
800
1600
A
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P = 1 ms
IFRM
Grenzlastintegral der Diode
I2t - value, Diode
I2t
A2s
kW
V
VR = 0V, tp = 10ms, TVj = 125°C
Tj = 125°C
222.200
800
Spitzenverlustleistung der Diode
maximum power dissipation diode
PRQM
VISOL
VISOL
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
6.000
2.600
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD ≤ 10 pC (acc. to IEC 1287)
V
Charakteristische Werte / Characteristic values
min. typ. max.
Diode / Diode
IF = 800 A, VGE = 0V, Tvj = 25°C
Durchlaßspannung
VF
-
-
-
-
2,80
2,80
0,01
4
3,50
3,50
1,6
V
V
forward voltage
IF = 800 A, VGE = 0V, Tvj = 125°C
VCE = 3300V, Tvj = 25°C
Sperrstrom
IR
mA
mA
reverse current
VCE = 3300V, Tvj = 125°C
20
IF = 800 A, - diF/dt = 2500 A/µsec
Rückstromspitze
peak reverse recovery current
V
R = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
F = 800 A, - diF/dt = 2500 A/µsec
R = 1800V, VGE = -10V, Tvj = 25°C
VR = 1800V, VGE = -10V, Tvj = 125°C
F = 800 A, - diF/dt = 2500 A/µsec
R = 1800V, VGE = -10V, Tvj = 25°C
IRM
-
-
650
700
-
-
A
A
I
Sperrverzögerungsladung
recovered charge
V
Qr
-
-
500
900
-
-
µAs
µAs
I
Abschaltenergie pro Puls
reverse recovery energy
V
Erec
-
-
490
-
-
mWs
mWs
VR = 1800V, VGE = -10V, Tvj = 125°C
1000
Modulinduktivität
stray inductance module
LsCE
pro Diode / per diode
-
-
25
-
-
nH
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
RCC’+EE’
T = 25°C, pro Diode / per diode
0,34
mΩ
prepared by: Jürgen Göttert
date of publication : 08.06.99
revision: 2
approved by: Chr. Lübke: 04.10.99
Datenblatt DD 800 S 33 K2
04.10.99
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