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DD800S33K2 PDF预览

DD800S33K2

更新时间: 2024-11-24 23:46:43
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
6页 73K
描述
IGBT Module

DD800S33K2 数据手册

 浏览型号DD800S33K2的Datasheet PDF文件第2页浏览型号DD800S33K2的Datasheet PDF文件第3页浏览型号DD800S33K2的Datasheet PDF文件第4页浏览型号DD800S33K2的Datasheet PDF文件第5页浏览型号DD800S33K2的Datasheet PDF文件第6页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
DD 800 S 33 K2  
Datenblatt  
datasheet  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
VR  
V
Periodische Spitzensperrspannung  
3300  
3300  
Tj = 25°C  
Tj = -25°C  
repetitive peak reverse voltage  
Dauergleichstrom  
DC forward current  
IF  
800  
1600  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
t
P = 1 ms  
IFRM  
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
A2s  
kW  
V
VR = 0V, tp = 10ms, TVj = 125°C  
Tj = 125°C  
222.200  
800  
Spitzenverlustleistung der Diode  
maximum power dissipation diode  
PRQM  
VISOL  
VISOL  
Isolations-Prüfspannung  
insulation test voltage  
RMS, f = 50 Hz, t = 1 min.  
6.000  
2.600  
Teilentladungs-Aussetzspannung  
partial discharge extinction voltage  
RMS, f = 50 Hz, QPD 10 pC (acc. to IEC 1287)  
V
Charakteristische Werte / Characteristic values  
min. typ. max.  
Diode / Diode  
IF = 800 A, VGE = 0V, Tvj = 25°C  
Durchlaßspannung  
VF  
-
-
-
-
2,80  
2,80  
0,01  
4
3,50  
3,50  
1,6  
V
V
forward voltage  
IF = 800 A, VGE = 0V, Tvj = 125°C  
VCE = 3300V, Tvj = 25°C  
Sperrstrom  
IR  
mA  
mA  
reverse current  
VCE = 3300V, Tvj = 125°C  
20  
IF = 800 A, - diF/dt = 2500 A/µsec  
Rückstromspitze  
peak reverse recovery current  
V
R = 1800V, VGE = -10V, Tvj = 25°C  
VR = 1800V, VGE = -10V, Tvj = 125°C  
F = 800 A, - diF/dt = 2500 A/µsec  
R = 1800V, VGE = -10V, Tvj = 25°C  
VR = 1800V, VGE = -10V, Tvj = 125°C  
F = 800 A, - diF/dt = 2500 A/µsec  
R = 1800V, VGE = -10V, Tvj = 25°C  
IRM  
-
-
650  
700  
-
-
A
A
I
Sperrverzögerungsladung  
recovered charge  
V
Qr  
-
-
500  
900  
-
-
µAs  
µAs  
I
Abschaltenergie pro Puls  
reverse recovery energy  
V
Erec  
-
-
490  
-
-
mWs  
mWs  
VR = 1800V, VGE = -10V, Tvj = 125°C  
1000  
Modulinduktivität  
stray inductance module  
LsCE  
pro Diode / per diode  
-
-
25  
-
-
nH  
Modul-Leitungswiderstand, Anschlüsse - Chip  
lead resistance, terminals - chip  
RCC’+EE’  
T = 25°C, pro Diode / per diode  
0,34  
mΩ  
prepared by: Jürgen Göttert  
date of publication : 08.06.99  
revision: 2  
approved by: Chr. Lübke: 04.10.99  
Datenblatt DD 800 S 33 K2  
04.10.99  
1 (6)  

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