5秒后页面跳转
DD800S33K2C PDF预览

DD800S33K2C

更新时间: 2024-11-25 21:14:27
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网二极管
页数 文件大小 规格书
6页 175K
描述
Rectifier Diode, 1 Phase, 2 Element, 800A, 3300V V(RRM), Silicon, MODULE-4

DD800S33K2C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:MODULE
包装说明:R-XUFM-X4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.71
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SEPARATE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):3.5 V
JESD-30 代码:R-XUFM-X4元件数量:2
相数:1端子数量:4
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:800 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:3300 V子类别:Other Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DD800S33K2C 数据手册

 浏览型号DD800S33K2C的Datasheet PDF文件第2页浏览型号DD800S33K2C的Datasheet PDF文件第3页浏览型号DD800S33K2C的Datasheet PDF文件第4页浏览型号DD800S33K2C的Datasheet PDF文件第5页浏览型号DD800S33K2C的Datasheet PDF文件第6页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
DD800S33K2C  
Diode-Wechselrichter / diode-inverter  
chstzulässige Werte / maximum rated values  
Vorläufige Daten / preliminary data  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
TÝÎ = 25°C  
TÝÎ = -25°C  
3300  
3300  
Vçç¢  
IŒ  
V
A
Dauergleichstrom  
DC forward current  
800  
1600  
220  
Periodischer Spitzenstrom  
repetitive peak forward current  
t« = 1 ms  
IŒç¢  
I²t  
A
Grenzlastintegral  
I²t - value  
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  
TÝÎ = 125°C  
kA²s  
kW  
µs  
Spitzenverlustleistung  
maximum power dissipation  
P笢  
tŒÓÒ ÑÍÒ  
1600  
10,0  
Mindesteinschaltdauer  
minimum turn-on time  
Charakteristische Werte / characteristic values  
min. typ. max.  
Durchlassspannung  
forward voltage  
IŒ = 800 A, V•Š = 0 V  
IŒ = 800 A, V•Š = 0 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,80 3,50  
2,80 3,50  
V
V
VŒ  
Rückstromspitze  
peak reverse recovery current  
IŒ = 800 A, - diŒ/dt = 4500 A/µs (TÝÎ=125°C) TÝÎ = 25°C  
TÝÎ = 125°C  
1100  
1300  
A
A
Vç = 1800 V  
V•Š = -15 V  
Iç¢  
Sperrverzögerungsladung  
recovered charge  
IŒ = 800 A, - diŒ/dt = 4500 A/µs (TÝÎ=125°C) TÝÎ = 25°C  
TÝÎ = 125°C  
500  
900  
µC  
µC  
Vç = 1800 V  
V•Š = -15 V  
QØ  
Abschaltenergie pro Puls  
reverse recovery energy  
IŒ = 800 A, - diŒ/dt = 4500 A/µs (TÝÎ=125°C) TÝÎ = 25°C  
Vç = 1800 V  
V•Š = -15 V  
490  
1150  
mJ  
mJ  
TÝÎ = 125°C  
EØþÊ  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Diode / per diode  
RÚÌœ†  
RÚ̆™  
26,0 K/kW  
K/kW  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Diode / per diode  
/
12,0  
ð«ÈÙÚþ = 1 W/(m·K)  
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Jürgen Biermann  
approved by: Thomas Schütze  
date of publication: 2008-08-21  
revision: 2.1  
1

与DD800S33K2C相关器件

型号 品牌 获取价格 描述 数据表
DD800S33K2CB3S2NDSA1 INFINEON

获取价格

Rectifier Diode,
DD800S33K2CNOSA1 INFINEON

获取价格

Rectifier Diode, 1 Phase, 2 Element, 800A, 3300V V(RRM), Silicon, MODULE-4
DD800S45KL3_B5 INFINEON

获取价格

10.4kV isolation
DD800S45KL3B5NPSA1 INFINEON

获取价格

Rectifier Diode, 1 Phase, 2 Element, 800A, 4500V V(RRM), Silicon, MODULE-4
DD810 DIOTEC

获取价格

Silicon Twin Rectifiers
DD812 ETC

获取价格

Analog IC
DD814 ETC

获取价格

Analog IC
DD815 ETC

获取价格

Analog IC
DD816 ETC

获取价格

Analog IC
DD818 ETC

获取价格

Analog IC