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DB2F43100L1 PDF预览

DB2F43100L1

更新时间: 2024-01-22 12:56:51
品牌 Logo 应用领域
松下 - PANASONIC 二极管
页数 文件大小 规格书
9页 1153K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon,

DB2F43100L1 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.72
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.6 VJESD-30 代码:S-XBCC-N2
湿度敏感等级:1最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:5 A
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:40 V最大反向电流:100 µA
最大反向恢复时间:0.045 µs表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DB2F43100L1 数据手册

 浏览型号DB2F43100L1的Datasheet PDF文件第2页浏览型号DB2F43100L1的Datasheet PDF文件第3页浏览型号DB2F43100L1的Datasheet PDF文件第4页浏览型号DB2F43100L1的Datasheet PDF文件第5页浏览型号DB2F43100L1的Datasheet PDF文件第6页浏览型号DB2F43100L1的Datasheet PDF文件第7页 
Doc No. TA4-ZZ-02022  
Revision. 1  
Product Standards  
Schottky Barrier Diode  
DB2F43100L  
DB2F43100L  
For rectification  
Unit: mm  
Features  
Low forward voltage VF  
Forward current (Average) IF(AV) ≦ 5.0 A rectification is possible  
RoHS compliant  
1.60  
2
(EU RoHS / MSL:Level 1 compliant)  
Marking Symbol:  
E6  
1
Packaging  
1.10  
2
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)  
Absolute Maximum Ratings  
Parameter  
Symbol Min  
Max  
Unit  
1
Reverse Voltage *1  
VR  
VRM  
IF(AV)  
IFSM  
Tj  
V
-
40  
Maximum Peak Reverse Voltage *1  
Average Forward Current *2,3  
Non-repetitive Peak Surge Forward Current *1,4  
Operating Junction Temperature *5  
Ambient Temperature  
(0.425)  
V
A
A
°C  
°C  
°C  
-
-
40  
5.0  
-
40  
1. Cathode  
Panasonic  
JEITA  
2. Anode  
DCSP1616010-N1  
-
150  
+150  
+150  
Ta  
-40  
-55  
Storage Temperature  
Tstg  
Code  
Note) *1: Ta = Tj = 25℃  
*2: Square wave : σ = 0.5  
*3: Solder Point Temperature : Tsp ≦ 122℃  
*4: Square wave : Tp = 5 ms  
*5: Power derating is necessary so that Tj < 150℃.  
IF  
Tp  
(Waveform definition)  
Duty Cycle : σ =  
Tp  
T
Time  
T
Electrical Characteristics Ta = 25 °C ± 3 °C  
Parameter  
Forward Voltage  
Reverse Current  
Terminal Capacitance  
Reverse Recovery Time *1  
Symbol  
Conditions  
Min Typ Max  
Unit  
V
μA  
pF  
ns  
VF  
IR  
Ct  
trr  
IF = 5.0 A  
VR = 40 V  
-
-
-
-
0.51 0.6  
15  
140  
45  
100  
-
-
VR = 10 V, f = 1 MHz  
IF = IR = 100 mA, Irr = 10 mA  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.).  
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.  
3. *1: Measurement circuit, input pulse, output pulse for Reverse recovery time  
(Measurement circuit)  
(Input pulse)  
(Output pulse)  
tr tp  
trr  
t
(2)  
IF  
(3)  
DUT  
(1)  
10%  
t
90%  
VR  
Irr = IR ÷10  
IR  
(1) Bias Insertion Unit (N-50BU)  
tp = 2 μs  
tr = 0.35 ns  
σ = 0.05  
IF = 100 mA  
(2) Pulse Generator (PG-10N), RS = 50 Ω  
IR = 100 mA  
Irr = 10 mA  
(3) Wave Form Analyzer (SAS-8130), Ri = 50 Ω  
1 of 8  
Page  
Established : 2017-01-20  
Revised : 2017-05-31  

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