Datasheet > DA22F21

DA22F21

更新时间： 2024-11-27 09:57:23

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	405K
描述
Silicon epitaxial planar type

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中文翻译

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数据手册

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DA22F21 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DA22F21

Silicon epitaxial planar type

For high speed switching circuits

ꢀPackage

 Features

 Short reverse recovery time t_rr

ꢀCode

 Low impedance by clip bonding package

Mini2-F4-B

ꢀPin Name

1: Cathode

2:Anode

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

 Packaging

ꢀMarking Symbol: 3Q

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Absolute Maximum Ratings T_a= 25°C

Parameter

Repetitive peak reverse voltage

Non-repetitive peak reverse surge voltage

Forward current

Symbol

V_RRM

V_RSM

I_F

Rating

200

Unit

200

1.0

Non-repetitive peak forwardsurgecurrent^*

Junction temperature

I_FSM

T_j

–40 to +150

°C

Storage temperature

stg

Note) : 50 Hz sine wave 1 cycle (Non-repetitive peak current)

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

V_F

Conditions

Min

Typ

Max

0.98

Unit

Forward voltage

Reverse current

I_F= 1.0A

I_RRM

C_t

V_RRM= 200 V

Terminal capacitance

V_R= 0 V, f = 1 MHz

Reverse recovery time ^*

t_rr

I_F= 0.5A, I_R= 1A, I_rr= 0.25 × I_R

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

of current from the operating equipment.

3. : t_rrmeasurement circuit

50 Ω

t_rr

I_F

D.U.T.

0.25 × I_R

I_R

5.5 Ω

Publication date: June 2010

ZKJ00030CED

12 3 4

中文翻译

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