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DA112S1 PDF预览

DA112S1

更新时间: 2024-11-15 22:29:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管测试光电二极管PC局域网
页数 文件大小 规格书
5页 54K
描述
DIODE ARRAY

DA112S1 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOD包装说明:R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:7.76Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:143308
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:DA112S1
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
其他特性:LOW CAPACITANCE配置:COMPLEX
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:1
元件数量:12端子数量:8
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.73 W
认证状态:Not Qualified最大重复峰值反向电压:18 V
最大反向电流:2 µA反向测试电压:15 V
子类别:Other Diodes表面贴装:YES
技术:AVALANCHE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

DA112S1 数据手册

 浏览型号DA112S1的Datasheet PDF文件第2页浏览型号DA112S1的Datasheet PDF文件第3页浏览型号DA112S1的Datasheet PDF文件第4页浏览型号DA112S1的Datasheet PDF文件第5页 
DA108S1  
DA112S1  
Application Specific Discretes  
A.S.D.TM  
DIODE ARRAY  
APPLICATION  
Protectionof logic side of ISDNS-interface.  
Protectionof I/O lines of microcontroller.  
Signal conditioning.  
SO8  
FUNCTIONAL DIAGRAM : DA108S1  
FEATURES  
ARRAYOF8 OR12DIODES  
REF 1  
8
1
2
3
4
LOW INPUT CAPACITANCE  
SUITABLEFOR DIGITAL LINE PROTECTION  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
7 REF 1  
6 REF 2  
5 REF 2  
DESCRIPTION  
ARRAY of 8 or 12 diodes configured by cells of 2  
diodes, each cell being used to protect signal line  
from transient overvoltagesby clamping action.  
FUNCTIONAL DIAGRAM : DA112S1  
COMPLIESWITH FOLLOWING STANDARDS :  
IEC1000-4-22level 4: 15kV(air discharge)  
8kV (contact discharge)  
REF 1  
I/O 6  
1
2
3
8
7
6
5
I/O 1  
I/O 2  
I/O 3  
REF 2  
I/O 5  
I/O 4 4  
1/5  
March 1998 - Ed:4  

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