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D690S26THOSA1 PDF预览

D690S26THOSA1

更新时间: 2024-11-13 04:41:47
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
6页 164K
描述
Rectifier Diode, 1 Phase, 1 Element, 690A, 2600V V(RRM), Silicon,

D690S26THOSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:O-CEDB-N2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.72
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-CEDB-N2最大非重复峰值正向电流:27500 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:690 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:2600 V最大反向恢复时间:9 µs
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

D690S26THOSA1 数据手册

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Datenblatt / Data sheet  
D690S  
S
Schnelle Diode  
Fast Diode  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
V
V
2000  
2200  
2400  
2600  
Periodische Spitzensperrspannung  
repetitive peak reverse voltages  
Tvj = -25°C... Tvj max  
VRRM  
IFRMSM  
IFAVM  
IFAVM  
IFRMS  
Durchlaßstrom-Grenzeffektivwert  
A
1600  
maximum RMS on-state current  
A
Dauergrenzstrom  
TC = 100 °C  
690  
average on-state current  
870 A  
Dauergrenzstrom  
average on-state current  
TC = 55 °C, θ = 180°sin, tP = 10 ms  
1360 A  
Durchlaßstrom-Effektivwert  
RMS on-state current  
14000 A  
11500 A  
33400 A  
27500 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25°C, tP = 10 ms  
Tvj = Tvj max , tP = 10 ms  
Tvj = 25°C, tP = 1 ms  
Tvj = Tvj max , tP = 1 ms  
IFSM  
980 103A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25°C, tP = 10 ms  
Tvj = Tvj max , tP = 10 ms  
Tvj = 25°C, tP = 1 ms  
Tvj = Tvj max , tP = 1 ms  
I²t  
661 103A²s  
558 103A²s  
378 103A²s  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
V
max.  
Tvj = Tvj max , iF = 3000A  
Tvj = Tvj max  
vF  
2,7  
V
Schleusenspannung  
threshold voltage  
V(TO)  
rT  
1,0  
0,5  
mΩ  
Ersatzwiderstand  
slope resistance  
Tvj = Tvj max  
Tvj = Tvj max  
A=  
-1,575E-01  
6,000E-04  
2,421E-01  
-1,582E-02  
Durchlaßkennlinie  
200 A iF 3000 A  
B=  
C=  
D=  
on-state characteristic  
vF = A + B iF + C ln ( iF + 1 ) + D  
iF  
typ.  
16,5 V  
Spitzenwert der Durchlaßverzögerungsspannung  
peak value of forward recovery voltage  
DIN IEC 747-2  
VFRM  
tfr  
Tvj = Tvj max, diF/dt = 50A/µs, vR = 0V  
typ.  
6,2 µs  
Durchlaßverzögerungszeit  
forward recovery time  
DIN IEC 747-2, Methode / Method II  
Tvj = Tvj max, iFM = 3000A  
diF/dt = 50A/µs, vR = 0V  
max.  
max.  
Sperrstrom  
reverse current  
Tvj = 25°C , vR = vRRM  
Tvj = Tvj max , vR = VRRM  
iR  
25 mA  
250 mA  
155 A  
970 µAs  
9 µs  
Rückstromspitze  
DIN IEC 747-2, Tvj = Tvj max  
IRM  
peak reverse recovery current  
iFM = 1020A, -diF/dt = 50A/µs  
v
R 0,5VRRM, vRM = 0,8VRRM  
DIN IEC 747-2, Tvj = Tvj max  
FM = 1020A, -diF/dt = 50A/µs  
R 0,5VRRM, vRM = 0,8VRRM  
Sperrverzögerungsladung  
recovered charge  
Qr  
trr  
i
v
Sperrverzögerungszeit  
reverse recovery time  
DIN IEC 747-2, Tvj = Tvj max  
iFM = 1020A, -diF/dt = 50/µs  
v
R 0,5VRRM, vRM = 0,8VRRM  
H.Sandmann  
date of publication:  
revision:  
2008-09-15  
3.0  
prepared by:  
approved by: M.Leifeld  
Seite/page  
1/6  
IFBIP D AEC / 2008-09-15, H.Sandmann  
A 48/08