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D45VH10AS PDF预览

D45VH10AS

更新时间: 2024-01-21 09:42:01
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
59页 339K
描述
15A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

D45VH10AS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
外壳连接:COLLECTOR最大集电极电流 (IC):15 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

D45VH10AS 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
These complementary silicon power transistors are designed for high–speed  
switching applications, such as switching regulators and high frequency inverters.  
The devices are also well–suited for drivers for high power switching circuits.  
15 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
80 VOLTS  
Fast Switching — t = 90 ns (Max)  
f
Key Parameters Specified @ 100 C  
Low Collector–Emitter Saturation Voltage —  
V
= 1.0 V (Max) @ 8.0 A  
CE(sat)  
Complementary Pairs Simplify Circuit Designs  
83 WATTS  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter Base Voltage  
V
CEO  
80  
100  
7.0  
V
CEV  
V
EB  
Collector Current — Continuous  
— Peak (1)  
I
C
15  
20  
I
CM  
P
D
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
83  
Watts  
W/ C  
0.67  
T , T  
55 to 150  
C
Operating and Storage Junction Temperature Range  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.5  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
62.5  
275  
θJA  
T
L
Maximum Lead Temperature for Soldering  
Purposes: 1/8from Case for 5 Seconds  
(1) Pulse Width  
6.0 ms, Duty Cycle  
50%.  
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.  
3–413  
Motorola Bipolar Power Transistor Device Data  

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