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D45VH10AU PDF预览

D45VH10AU

更新时间: 2024-02-04 22:57:42
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
5页 90K
描述
15A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

D45VH10AU 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:83 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
最大关闭时间(toff):590 nsBase Number Matches:1

D45VH10AU 数据手册

 浏览型号D45VH10AU的Datasheet PDF文件第2页浏览型号D45VH10AU的Datasheet PDF文件第3页浏览型号D45VH10AU的Datasheet PDF文件第4页浏览型号D45VH10AU的Datasheet PDF文件第5页 
D44VH10 (NPN),  
D45VH10 (PNP)  
Complementary Silicon  
Power Transistors  
These complementary silicon power transistors are designed for  
high-speed switching applications, such as switching regulators and  
high frequency inverters. The devices are also well-suited for drivers  
for high power switching circuits.  
http://onsemi.com  
15 A  
Features  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80 V, 83 W  
ꢀFast Switching -  
ꢁ t = 90 ns (Max)  
f
ꢀKey Parameters Specified @ 100°C  
ꢀLow Collector-Emitter Saturation Voltage -  
MARKING  
DIAGRAM  
ꢁV  
= 1.0 V (Max) @ 8.0 A  
CE(sat)  
ꢀComplementary Pairs Simplify Circuit Designs  
ꢀPb-Free Packages are Available*  
4
MAXIMUM RATINGS  
STYLE 1:  
D4xVH10G  
AYWW  
PIN 1. BASE  
Rating  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter Base Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
2. COLLECTOR  
3. EMITTER  
4. COLLECTOR  
1
V
CEO  
2
3
V
CEV  
100  
7.0  
CASE 221A-09  
TO-220AB  
V
EB  
Collector Current -Continuous  
-Peak (Note 1)  
I
C
15  
20  
I
CM  
P
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
83  
W
x
= 4 or 5  
= Assembly Location  
= Year  
D
C
A
Y
0.67  
W/°C  
T , T  
J
-ꢁ55 to  
150  
°C  
Operating and Storage Junction  
Temperature Range  
stg  
WW = Work Week  
G
= Pb-Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.5  
Unit  
°C/W  
°C/W  
°C  
ORDERING INFORMATION  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
q
JC  
Device  
Package  
Shipping  
R
q
JA  
62.5  
275  
D44VH10  
TO-220  
50 Units/Rail  
50 Units/Rail  
T
Maximum Lead Temperature for Soldering  
L
Purposes: 1/8from Case for 5 Seconds  
D44VH10G  
TO-220  
(Pb-Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
D45VH10  
TO-220  
50 Units/Rail  
50 Units/Rail  
D45VH10G  
TO-220  
(Pb-Free)  
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 5  
1
Publication Order Number:  
D44VH/D  
 

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