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D40K3 PDF预览

D40K3

更新时间: 2024-11-12 09:52:19
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
2页 153K
描述
NPN SILICON DARLINGTON POWER TRANSISTOR

D40K3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SFM
包装说明:TO-202, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.81
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):1000JEDEC-95代码:TO-202AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):1.67 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):75 MHzBase Number Matches:1

D40K3 数据手册

 浏览型号D40K3的Datasheet PDF文件第2页 
TM  
Central  
D40K SERIES  
Semiconductor Corp.  
NPN SILICON DARLINGTON  
POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR D40K Series  
types are NPN Silicon Darlington Power  
Transistors designed for general purpose  
amplifier applications where high gain is required.  
MARKING: FULL PART NUMBER  
TO-202 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL D40K1, 3  
D40K2, 4  
UNITS  
V
A
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Base Current  
V
30  
50  
CEO  
V
V
30  
50  
V
V
A
A
A
W
W
°C  
°C/W  
°C/W  
CES  
EBO  
C
13  
2.0  
3.0  
0.2  
1.67  
10  
I
I
CM  
I
B
Power Dissipation  
P
P
D
D
stg  
JA  
JC  
Power Dissipation (T =25°C)  
C
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
75  
J
Θ
Θ
Thermal Resistance  
12.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
V
V
=Rated V  
=13V  
500  
100  
nA  
nA  
V
CES  
EBO  
CE  
EB  
CE  
BV  
I =10mA (D40K1, 3)  
30  
50  
CEO  
CEO  
C
BV  
I =10mA (D40K2, 4)  
V
C
V
V
V
V
I =1.5A, I =3.0mA (D40K1, 2)  
1.5  
1.5  
2.5  
2.5  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
C
B
I =1.0A, I =2.0mA (D40K3, 4)  
V
C
B
I =1.5A, I =3.0mA (D40K1, 2)  
V
C
B
I =1.0A, I =2.0mA (D40K3, 4)  
V
C
B
h
h
h
V
=5.0V, I =200mA  
10K  
1K  
CE  
CE  
CE  
CB  
CE  
C
V
V
V
V
=5.0V, I =1.5A (D40K1, 2)  
FE  
C
=5.0V, I =1.0A (D40K3, 4)  
C
=10V, f=1.0MHz  
1K  
FE  
C
10  
pF  
cb  
f
=5.0V, I =20mA  
75  
MHz  
T
C
R0 (28-March 2008)  

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