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D39-08D PDF预览

D39-08D

更新时间： 2024-11-06 02:51:55
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THINKISEMI /
页数 文件大小 规格书
2页 269K
描述
20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

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中文翻译

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D39-08D 数据手册

 浏览型号D39-08D的Datasheet PDF文件第2页 
D39-02D thru D39-12D  
D39-02D thru D39-12D  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers  
TO-3P(TO-3PN/TO-3PB)  
Unit:inch(mm)  
Features  
(
)
)
(
)
)
.604 15.35  
.199 5.05  
※ ThinkiSemi latest&matured process FRD/FRED  
※ Low forward voltage drop  
※ High current capability  
(
.620 15.75  
(
.175 4.45  
)
)
.142 .60  
(3  
.125(3.20  
※ Low reverse leakage current  
※ High surge current capability  
Application  
(
.095 2.40  
)
※ Automotive Inverters and Solar Inverters  
※ Car Audio Amplifiers and Sound Device Systems  
※ Plating Power Supply,Motor Control,UPS and SMPS etc.  
(
)
)
.126 3.20  
(
.110 2.80  
(
)
)
.050 1.25  
(
.045 1.15  
(
)
)
.030 0.75  
Mechanical Data  
(
.017 0.45  
※ Case: Heatsink open metal TO-3P(TO-3PN/TO-3PB) package  
※ Epoxy: UL 94V-0 rate flame retardant  
※ Terminals: Solderable per MIL-STD-202 method 208  
※ Polarity: As marked on diode body  
※ Mounting position: Any  
(
)
)
(
)
)
.225 5.70  
.225 5.70  
(
.204 5.20  
(
.204 5.20  
Case  
Case  
Case  
Case  
※ Weight: 6.5 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "D"  
Tandem Polarity  
Suffix "S"  
Common Cathode  
Suffix "C"  
Common Anode  
Suffix "N"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25℃ ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
PARAMETER  
SYMBOL  
D39-02D  
D39-04D  
D39-06D  
D39-08D  
D39-10D  
D39-12D  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
V
V
V
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
20.0  
200  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x10.0A=20.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@10.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.50-1.70  
0.85-0.95  
1.00-1.25  
1.25-1.50  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-50  
50-75  
Trr  
CJ  
nS  
pF  
100  
0.75  
RθJC  
℃/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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