5秒后页面跳转
D2659N24TVF PDF预览

D2659N24TVF

更新时间: 2023-01-15 00:00:00
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
8页 226K
描述
Rectifier Diode, 1 Element, 3000A, 2400V V(RRM),

D2659N24TVF 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
最大非重复峰值正向电流:41000 A元件数量:1
最高工作温度:150 °C最大输出电流:3000 A
最大重复峰值反向电压:2400 V子类别:Rectifier Diodes
Base Number Matches:1

D2659N24TVF 数据手册

 浏览型号D2659N24TVF的Datasheet PDF文件第2页浏览型号D2659N24TVF的Datasheet PDF文件第3页浏览型号D2659N24TVF的Datasheet PDF文件第4页浏览型号D2659N24TVF的Datasheet PDF文件第5页浏览型号D2659N24TVF的Datasheet PDF文件第6页浏览型号D2659N24TVF的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Gleichrichterdiode  
Rectifier Diode  
D2659N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / maximum rated values  
VRRM  
IFRMSM  
IFAVM  
IFSM  
2000 V  
2200 V  
2400 V  
Tvj = -40°C... Tvj max  
PeriodischeSpitzensperrspannung  
repetitive peak reverse voltages  
Durchlaßstrom-Grenzeffektivwert  
4710 A  
maximum RMS on-state current  
TC = 100 °C  
TC = 83 °C  
Dauergrenzstrom  
average on-state current  
2650 A  
3000 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
41000 A 1)  
33500 A  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
8405 10³A²s  
5611 10³A²s  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Tvj = Tvj max , iF = 9,0 kA  
Tvj = Tvj max , iF = 2,5 kA  
vF  
max.  
max.  
2,25 V  
1,25 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,82 V  
m  
0,148  
Ersatzwiderstand  
slope resistance  
A=  
B=  
C=  
D=  
-4,562E-01  
1,522E-04  
2,069E-01  
-5,183E-03  
Durchlaßkennlinie  
on-state characteristic  
700 A iF 13000 A  
vF = A + B iF + C ln ( iF + 1 ) + D  
iF  
max.  
Sperrstrom  
reverse current  
Tvj = Tvj max , vR = VRRM  
iR  
200 mA  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
Kühlfläche / cooling surface  
beidseitig / two-sided, θ = 180°sin  
beidseitig / two-sided, DC  
Anode / anode, θ = 180°sin  
Anode / anode, DC  
RthJC  
max. 0,0169 °C/W  
max. 0,0160 °C/W  
max. 0,0329 °C/W  
max. 0,0320 °C/W  
max. 0,0329 °C/W  
max. 0,0320 °C/W  
Kathode / cathode, θ = 180°sin  
Kathode / cathode, DC  
Kühlfläche / cooling surface  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCH  
0,0025  
0,0050  
beidseitig / two-sided  
max.  
max.  
°C/W  
°C/W  
einseitig / single-sided  
180  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Betriebstemperatur  
Tvj max  
Tc op  
°C  
-40...+150 °C  
-40...+150 °C  
operating temperature  
Tstg  
Lagertemperatur  
storage temperature  
1) Gehäusegrenzstrom IRSM-case = 32kA (50Hz Sinushalbwelle) / Peak case non rupture current IRSM-case = 32kA (50Hz sinusoidal half-wave)  
H.Sandmann  
date of publication: 2007-10-22  
revision:  
prepared by:  
3
approved by: J.Przybilla  
Seite/page  
A 45/07  
1/8  
BIP D AEC / 2007-10-22, H.Sandmann  

与D2659N24TVF相关器件

型号 品牌 获取价格 描述 数据表
D268 ETC

获取价格

Control/Communicators
D269 ETC

获取价格

Control/Communicators
D269N ETC

获取价格

SCR / Diode Presspacks
D269N2800 INFINEON

获取价格

Rectifier Diode,
D269N3600 INFINEON

获取价格

Rectifier Diode,
D26P26K6PA00 AMPHENOL

获取价格

D Subminiature Connector, 25 Contact(s), Male, Wire Wrap Terminal
D26V0H1U2LP16 DIODES

获取价格

1 CHANNEL HIGH SURGE TVS DIODE
D26V0H1U2LP16-7 DIODES

获取价格

1 CHANNEL HIGH SURGE TVS DIODE
D26V0H1U2LP20 DIODES

获取价格

D26V0S1U2LP20 DIODES

获取价格