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D25XB20 PDF预览

D25XB20

更新时间: 2024-09-23 20:17:27
品牌 Logo 应用领域
EIC 局域网二极管
页数 文件大小 规格书
2页 43K
描述
Rectifier Diode,

D25XB20 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.77最小击穿电压:200 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
最大非重复峰值正向电流:350 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:3.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

D25XB20 数据手册

 浏览型号D25XB20的Datasheet PDF文件第2页 
SILICON BRIDGE RECTIFIERS  
D25XB20 ~ D25XB60  
RBV25  
PRV : 200 - 600 Volts  
Io : 25 Amperes  
3.9 ± 0.2  
C3  
30 ± 0.3  
4.9 ± 0.2  
Æ 3.2 ± 0.1  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
* Low reverse current  
* Low forward voltage drop  
* Ideal for printed circuit board  
* Very good heat dissipation  
* Pb / RoHS Free  
+
~ ~  
1.0 ± 0.1  
MECHANICAL DATA :  
* Case : Reliable low cost construction  
utilizing molded plastic technique  
* Epoxy : UL94V-O rate flame retardant  
* Terminals : Plated lead solderable per  
MIL-STD-202, Method 208 guaranteed  
* Polarity : Polarity symbols marked on case  
* Mounting position : Any  
10 7.5 7.5  
±0.2 ±0.2 ±0.2  
2.0 ± 0.2  
0.7 ± 0.1  
Dimensions in millimeters  
* Weight : 7.7 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL  
D25XB20  
D25XB60  
UNIT  
VRRM  
VRMS  
VDC  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
200  
140  
200  
600  
420  
600  
V
V
V
A
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
50 Hz sine wave, R-load  
25 (With heatsink, Tc = 98°C)  
IF(AV)  
3.5 (Without heatsink, Ta = 25°C)  
Peak Forward Surge Current, 50Hz sine wave  
Non-repetitive 1 cycle peak value, Tj = 25 °C  
Current Squared Time at t < 8.3 ms.  
Maximum Forward Voltage per Diode at IF = 12.5 A  
IFSM  
350  
A
I2t  
VF  
A2S  
V
300  
1.05  
IR  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Typical Thermal Resistance (Note 1)  
Ta = 25 °C  
mA  
IR(H)  
200  
Ta = 100 °C  
mA  
RqJC  
TJ  
1.0  
°C/W  
°C  
Operating Junction Temperature Range  
Storage Temperature Range  
- 40 to + 150  
- 40 to + 150  
TSTG  
°C  
Note :  
1. Thermal resistance from junction to case, With heat sink.  
Page 1 of 2  
Rev. 02 : March 25, 2005  

D25XB20 替代型号

型号 品牌 替代类型 描述 数据表
GSIB2520-E3/45 VISHAY

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