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D2450N04THOSA1 PDF预览

D2450N04THOSA1

更新时间: 2024-11-05 07:30:39
品牌 Logo 应用领域
英飞凌 - INFINEON 测试二极管
页数 文件大小 规格书
8页 215K
描述
Rectifier Diode, 1 Phase, 1 Element, 2450A, 400V V(RRM), Silicon,

D2450N04THOSA1 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:O-CEDB-N2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.73应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.5 V
JESD-30 代码:O-CEDB-N2最大非重复峰值正向电流:28500 A
元件数量:1相数:1
端子数量:2最高工作温度:180 °C
最低工作温度:-40 °C最大输出电流:2450 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向电流:50000 µA反向测试电压:400 V
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

D2450N04THOSA1 数据手册

 浏览型号D2450N04THOSA1的Datasheet PDF文件第2页浏览型号D2450N04THOSA1的Datasheet PDF文件第3页浏览型号D2450N04THOSA1的Datasheet PDF文件第4页浏览型号D2450N04THOSA1的Datasheet PDF文件第5页浏览型号D2450N04THOSA1的Datasheet PDF文件第6页浏览型号D2450N04THOSA1的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Gleichrichterdiode  
Rectifier Diode  
D2450N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / maximum rated values  
VRRM  
400 V  
600 V  
Periodische Spitzensperrspannung  
Tvj = -40°C... Tvj max  
repetitive peak reverse voltages  
Durchlaßstrom-Grenzeffektivwert  
IFRMSM  
IFAVM  
IFAVM  
IFRMS  
4000 A  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
Dauergrenzstrom  
average on-state current  
TC = 100 °C  
2450 A  
3310 A  
TC = 55 °C, θ = 180°sin, tP = 10 ms  
5190 A  
Durchlaßstrom-Effektivwert  
RMS on-state current  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max tP = 10 ms  
IFSM  
I²t  
33000 A  
28500 A  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
5445 10³A²s  
4061 10³A²s  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Tvj = Tvj max , iF = 7,7 kA  
Tvj = Tvj max , iF = 2,0 kA  
vF  
max.  
max.  
1,5 V  
0,88 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
Tvj = Tvj max  
Tvj = Tvj max  
V(TO)  
rT  
0,7 V  
mΩ  
0,0975  
Ersatzwiderstand  
slope resistance  
A=  
B=  
C=  
D=  
1,154E+00  
3,499E-05  
-1,228E-01  
1,338E-02  
Durchlaßkennlinie  
on-state characteristic  
600 A iF 11000 A  
vF = A + B iF + C ln ( iF + 1 ) + D  
iF  
max.  
Sperrstrom  
reverse current  
Tvj = Tvj max , vR = VRRM  
iR  
50 mA  
Thermische Eigenschaften / Thermal properties  
Kühlfläche / cooling surface  
beidseitig / two-sided, θ = 180°sin  
beidseitig / two-sided, DC  
Anode / anode, θ = 180°sin  
Anode / anode, DC  
RthJC  
Innerer Wärmewiderstand  
max. 0,0253 °C/W  
max. 0,0240 °C/W  
max. 0,0414 °C/W  
max. 0,0400 °C/W  
max. 0,0614 °C/W  
max. 0,0600 °C/W  
thermal resistance, junction to case  
Kathode / cathode, θ = 180°sin  
Kathode / cathode, DC  
Kühlfläche / cooling surface  
beidseitig / two-sided  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCH  
0,005  
max.  
max.  
°C/W  
0,010 °C/W  
einseitig / single-sided  
180  
°C  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Tvj max  
Tc op  
Tstg  
Betriebstemperatur  
operating temperature  
-40...+180 °C  
-40...+180 °C  
Lagertemperatur  
storage temperature  
H.Sandmann  
date of publication: 2010-01-21  
prepared by:  
revision:  
3.1  
approved by: M.Leifeld  
A 15/10  
1/8  
IFBIP D AEC/ 2010-01-21, H.Sandmann  
Seite/page  

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