5秒后页面跳转
D1231UK PDF预览

D1231UK

更新时间: 2024-11-05 14:54:31
品牌 Logo 应用领域
TTELEC /
页数 文件大小 规格书
2页 30K
描述
OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

D1231UK 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CERAMIC, F-0127, 8 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
其他特性:LOW NOISE外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:40 V
最大漏极电流 (ID):10 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDSO-N8
JESD-609代码:e4元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:GOLD端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

D1231UK 数据手册

 浏览型号D1231UK的Datasheet PDF文件第2页 
TetraFET  
D1231UK  
ROHS COMPLIANT  
METAL GATE RF SILICON FET  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
MECHANICAL DATA  
Dimensions in mm.  
2
.
3
1
3
5
.
5
0
±
0
.
1
5
±
0
.
2
0
4
.
3
P
R
.
1
.
2
7
±
0
.
0
5
L
.
2
P
L
.
10W – 12.5V – 500MHz  
SINGLE ENDED  
2
P
L
.
0
.
4
7
1
.
6
5
2
P
L
.
4
3
2
1
5
6
7
8
1
.
2
7
.
0
2
0
.
0
7
5
.
8
7
6
.
5
0
±
0
.
3
8
1
1
.
2
7
P
2
L
.
P
L
.
±
0
.
1
0
0
.
1
5
1
.
2
7
0
.
1
0
R
.
T
Y
P
.
0
.
4
7
2
P
L
.
FEATURES  
0
.
8
0
0
.
1
0
0
.
5
0
8
4
P
L
.
0
.
1
0
T
Y
P
.
T
Y
P
.
4
.
3
4
±
0
.
1
0
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
F-0127 PACKAGE  
• VERY LOW C  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
PIN 1 – SOURCE  
PIN 2 – DRAIN  
PIN 3 – DRAIN  
PIN 4 – SOURCE  
PIN 5 – SOURCE  
PIN 6 – GATE  
PIN 7 – GATE  
PIN 8 – SOURCE  
• HIGH GAIN – 10 dB MINIMUM  
Ceramic Material: Alumina.  
Parts can also be supplied with AlN or BeO for  
improved thermal resistance.  
Contact Semelab for details.  
APPLICATIONS  
HF/VHF/UHF COMMUNICATIONS  
from 1 MHz to 500 MHz  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
30W  
40V  
D
BV  
BV  
I
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
DSS  
GSS  
±20V  
10A  
D(sat)  
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
j
T
Maximum Operating Junction Temperature  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.  
Document Number 3176  
E-mail: sales@semelab.co.uk  
Website http://www.semelab.co.uk  
Issue 3  

与D1231UK相关器件

型号 品牌 获取价格 描述 数据表
D123240FP0-PB VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 324ohm, SURFACE MOUNT, 0805, CHIP
D123240FP5 VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 324ohm, SURFACE MOUNT, 0805, CHIP
D123240FP5-PB VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 324ohm, SURFACE MOUNT, 0805, CHIP
D123241FP0 VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 3240ohm, SURFACE MOUNT, 0805, CHIP
D123241FP0-E3 VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 3240ohm, SURFACE MOUNT, 0805, CHIP
D123241FP5 VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 3240ohm, SURFACE MOUNT, 0805, CHIP
D123241FP5-PB VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 3240ohm, SURFACE MOUNT, 0805, CHIP
D123242FP0-PB VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 32400ohm, SURFACE MOUNT, 0805, CHIP
D123243FP0 VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 324000ohm, SURFACE MOUNT, 0805, CHIP
D123243FP5 VISHAY

获取价格

RESISTOR, METAL GLAZE/THICK FILM, 0.125W, 1%, 100ppm, 324000ohm, SURFACE MOUNT, 0805, CHIP