Datasheet > D10SB100

D10SB100

更新时间： 2024-01-22 08:05:00

品牌	Logo	应用领域
圣诺 - SENO		二极管
页数	文件大小	规格书
2页	99K
描述
10A GLASS PASSIVATED BRIDGE RECTIFIER

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中文翻译

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技术参数
数据手册

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D10SB100 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.75
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-609代码：	e3
端子面层：	MATTE TIN	Base Number Matches：	1

D10SB100 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

D10SB05-D10SB100

10A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

High Case Dielectric Strength of 1500V_RMS

Low Reverse Leakage Current

Surge Overload Rating to 170A Peak

Ideal for Printed Circuit Board Applications

Plastic Material - UL Flammability

Classification 94V-0

Dim

Min

Max

25.20

15.30

24.80

14.70

4.00 Nominal

17.20

0.90

7.30

17.80

1.10

7.70

Lead Free Finish/RoHS Complian

3.10 Æ 3.40 Æ

Mechanical Data

3.30

1.50

9.30

2.50

3.40

4.40

0.60

3.70

1.90

9.70

2.90

3.80

4.80

0.80

Case: Molded Plastic

Terminals: Plated Leads, Solderable per

MIL-STD-202, Method 208

Polarity: Molded on Body

Mounting: Through Hole for #6 Screw

Mounting Torque: 5.0 in-lbs Maximum

Weight: 6.6 grams (approx.)

Marking: Type Number

All Dimensions in mm

Lead Free: For RoHS / Lead Free Version

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

D10SB D10SB D10SB D10SB D10SB D10SB D10SB

Characteristic

Symbol

Unit

100

200

140

600

420

800

560

100

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

400

1000

700

V_R(RMS)

I_O

RMS Reverse Voltage

280

Average Forward Rectified Output Current

@ T_C= 110°C

Non-Repetitive Peak Forward Surge Current, 8.3 ms single

half-sine-wave superimposed on rated load

(JEDEC method)

I_FSM

170

Forward Voltage per element

@ I_F= 5.0A

V_FM

I_R

0.98

2.0

500

Peak Reverse Current

at Rated DC Blocking Voltage

@T_C25°C

@ T_C= 125°C

I²t Rating for Fusing (t < 8.3ms) (Note 1)

I²t

C_j

120

A²s

Typical Junction Capacitance per Element (Note 2)

Typical Thermal Resistance, Junction to Case (Note 3)

Operating and Storage Temperature Range

R_qJC

T_j, T_STG

1.4

°C/W

°C

-55 to +150

Notes:

1. Non-repetitive, for t > 1.0ms and < 8.3ms.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.

www.senocn.com

D10SB05-D10SB100

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与D10SB100相关器件

型号	品牌	获取价格	描述	数据表
D10SB20	DACHANG	获取价格	Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800V Forward Current 10A
D10SB20	SENO	获取价格	10A GLASS PASSIVATED BRIDGE RECTIFIER
D10SB20	LRC	获取价格	10A(SIP) BRIDGE RECTIFIERS
D10SB20	SSE	获取价格	SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER
D10SB20	SECOS	获取价格	Molding Single-Phase Bridge Rectifier
D10SB40	DACHANG	获取价格	Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800V Forward Current 10A
D10SB40	LRC	获取价格	10A(SIP) BRIDGE RECTIFIERS
D10SB40	SSE	获取价格	SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER
D10SB40	SECOS	获取价格	Molding Single-Phase Bridge Rectifier
D10SB60	SECOS	获取价格	Molding Single-Phase Bridge Rectifier

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