5秒后页面跳转
D10SC4MR PDF预览

D10SC4MR

更新时间: 2024-02-18 23:58:35
品牌 Logo 应用领域
新电元 - SHINDENGEN 肖特基二极管
页数 文件大小 规格书
11页 471K
描述
Schottky Rectifiers (SBD) (40V 10A)

D10SC4MR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.86
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0湿度敏感等级:2
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED

D10SC4MR 数据手册

 浏览型号D10SC4MR的Datasheet PDF文件第2页浏览型号D10SC4MR的Datasheet PDF文件第3页浏览型号D10SC4MR的Datasheet PDF文件第4页浏览型号D10SC4MR的Datasheet PDF文件第5页浏览型号D10SC4MR的Datasheet PDF文件第6页浏览型号D10SC4MR的Datasheet PDF文件第7页 
SHINDENGEN  
Schottky Rectifiers (SBD)  
Dual  
OUTLINE DIMENSIONS  
Unit : mm  
D10SC4MR  
40V 10A  
Case : ITO-220  
FEATURES  
Tj150℃  
PRRSM avalanche guaranteed  
Fully Isolated Molding  
APPLICATION  
Switching power supply  
DC/DC converter  
Home Appliances, Office Equipment  
Telecommunication  
RATINGS  
Absolute Maximum Ratings (If not specified Tc=25℃)  
Item  
Storage Temperature  
Symbol  
Conditions  
Ratings  
Unit  
Tstg  
Tj  
-40~150  
150  
40  
V
Operating Junction Temperature  
M aximum Reverse Voltage  
VRM  
Repetitive Peak Surge Reverse Voltage  
Average Rectified Forward Current  
Peak Surge Forward Current  
Repetitive Peak Surge Reverse Power  
Dielectric Strength  
VRRSM  
IO  
Pulse width 0.5ms, duty 1/40  
45  
10  
100  
330  
1.5  
V
A
A
W
kV  
Nm  
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=123℃  
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃  
Pulse width 10μs, Rating of per diode, Tj= 25℃  
Terminals to case, AC 1 minute  
IFSM  
PRRSM  
Vdis  
M ounting Torque  
TOR (Recommended torque0.3Nm)  
0.5  
●Electrical Characteristics (If not specified Tc=25℃)  
Item  
Symbol  
Conditions  
Pulse measurement, Rating of per diode  
Ratings  
Unit  
Forward Voltage  
Reverse Current  
I =5A,  
F
VF  
IR  
M ax.0.55  
M ax. 3.5 mA  
Typ.180 pF  
M ax.3.3 /W  
M ax.1.5  
V
VR=VRM , Pulse measurement, Rating of per diode  
f=1MHz, VR=10V, Rating of per diode  
Junction Capacitance  
Cj  
θjc junction to case  
Thermal Resistance  
θcf case to heatsink, M ounting torque=0.5Nm  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  

D10SC4MR 替代型号

型号 品牌 替代类型 描述 数据表
STTH806TTI STMICROELECTRONICS

功能相似

TURBOSWITCHO Tandem 600V ULTRA-FAST BOOST DIODE
STTH2003CT STMICROELECTRONICS

功能相似

HIGH FREQUENCY SECONDARY RECTIFIER
STTH2002CT STMICROELECTRONICS

功能相似

HIGH EFFICIENCY ULTRAFAST DIODE

与D10SC4MR相关器件

型号 品牌 获取价格 描述 数据表
D10SC6M SHINDENGEN

获取价格

Schottky Rectifiers (SBD) (60V 10A)
D10SC6MR SHINDENGEN

获取价格

Schottky Rectifiers (SBD) (60V 10A)
D10SC9M SHINDENGEN

获取价格

Schottky Rectifiers (SBD) (90V 10A)
D10SD6M SHINDENGEN

获取价格

Schottky Rectifiers (SBD) (60V 10A)
D10SHP ETC

获取价格

Glass Fibre-optic Specifications
D10SHS ETC

获取价格

Glass Fibre-optic Specifications
D10T000-16100FC-G DBLECTRO

获取价格

Parallel - Fundamental Quartz Crystal
D10T000-16200EFT-G DBLECTRO

获取价格

Parallel - Fundamental Quartz Crystal, 10MHz Nom,
D10T000-16300EFC-G DBLECTRO

获取价格

Parallel - Fundamental Quartz Crystal
D10T000-17100AFT-G DBLECTRO

获取价格

Parallel - Fundamental Quartz Crystal, 10MHz Nom,