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D1024UK PDF预览

D1024UK

更新时间: 2024-11-14 21:54:11
品牌 Logo 应用领域
SEME-LAB 射频
页数 文件大小 规格书
4页 73K
描述
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL

D1024UK 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.09
其他特性:LOW NOISE配置:COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压:70 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F8
JESD-609代码:e4元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:GOLD端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

D1024UK 数据手册

 浏览型号D1024UK的Datasheet PDF文件第2页浏览型号D1024UK的Datasheet PDF文件第3页浏览型号D1024UK的Datasheet PDF文件第4页 
TetraFET  
D1024UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
B
A
E
C
(2 pls)  
1
2
7
3
6
4
5
K
F
G
40W – 28V – 500MHz  
PUSH–PULL  
8
J
Typ.  
D
M
Q
FEATURES  
P
I
N
O
H
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND  
APPLICATIONS  
DD  
PIN 1  
PIN 3  
PIN 5  
PIN 7  
SOURCE (COMMON) PIN 2  
DRAIN 2 PIN 4  
SOURCE (COMMON) PIN 6  
DRAIN 1  
SOURCE (COMMON)  
GATE 2  
• LOW C  
GATE 1  
PIN 8  
SOURCE (COMMON)  
rss  
DIM  
A
B
C
D
E
mm  
9.14  
12.70  
45°  
6.86  
0.76  
9.78  
19.05  
4.19  
Tol.  
Inches  
Tol.  
• USEFUL P at 1 GHz  
0.13  
0.13  
5°  
0.360  
0.500  
45°  
0.005  
0.005  
5°  
O
• LOW NOISE  
0.13  
0.13  
0.13  
0.25  
0.13  
0.13  
0.13  
0.13  
0.13  
0.13  
0.02  
0.64  
0.13  
0.270  
0.030  
0.385  
0.750  
0.165  
0.125  
0.060R  
0.065R  
0.650  
0.900  
0.005  
0.250  
0.424  
0.005  
0.005  
0.005  
0.010  
0.005  
0.005  
0.005  
0.005  
0.005  
0.005  
0.001  
0.025  
0.005  
• HIGH GAIN – 13 dB MINIMUM  
F
G
H
I
J
K
M
N
O
P
APPLICATIONS  
3.17  
1.52R  
1.65R  
16.51  
22.86  
0.13  
HF/VHF/UHF COMMUNICATIONS  
from 1 MHz to 1 GHz  
6.35  
10.77  
Q
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
100W  
case  
P
Power Dissipation  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage *  
Drain Current *  
70V  
±20V  
DSS  
GSS  
I
5A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Document Number 3037  
Issue 1  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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