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D1025UK PDF预览

D1025UK

更新时间: 2024-02-10 01:12:19
品牌 Logo 应用领域
SEME-LAB 晶体晶体管射频放大器局域网
页数 文件大小 规格书
2页 38K
描述
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED

D1025UK 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, O-CXFM-F6
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.29
其他特性:LOW NOISE配置:SINGLE
最小漏源击穿电压:70 V最大漏极电流 (ID):25 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-CXFM-F6JESD-609代码:e4
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:GOLD
端子形式:FLAT端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

D1025UK 数据手册

 浏览型号D1025UK的Datasheet PDF文件第2页 
TetraFET  
D1025UK  
METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
C
D
(2 pls)  
E
B
1
2
3
100W – 28V – 175MHz  
SINGLE ENDED  
A
G
5
4
H
I
FEATURES  
• SIMPLIFIED AMPLIFIER DESIGN  
• SUITABLE FOR BROAD BAND APPLICATIONS  
F
M
K
J
N
DT  
• LOW C  
PIN 1  
PIN 3  
PIN 5  
SOURCE (COMMON) PIN 2  
SOURCE (COMMON) PIN 4  
DRAIN  
GATE  
SOURCE (COMMON)  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
DIM  
A
B
C
D
E
mm  
6.35 DIA  
3.17 DIA  
18.41  
5.46  
Tol.  
Inches  
Tol.  
0.13 0.250 DIA 0.005  
0.13 0.125 DIA 0.005  
• HIGH GAIN – 16 dB MINIMUM  
0.25  
0.13  
0.13  
MAX  
0.38  
0.13  
0.13  
0.03  
0.13  
0.13  
0.25  
0.725  
0.215  
0.205  
0.300  
0.850  
0.155  
0.500  
0.005  
0.975  
0.102  
0.160  
0.010  
0.005  
0.005  
MAX  
0.015  
0.005  
0.005  
0.001  
0.005  
0.005  
0.010  
5.21  
F
7.62  
APPLICATIONS  
G
H
I
21.59  
3.94  
12.70  
0.13  
HF/VHF COMMUNICATIONS  
from 1 MHz to 175 MHz  
J
K
M
N
24.76  
2.59  
4.06  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
175W  
D
BV  
BV  
Drain – Source Breakdown Voltage  
Gate – Source Breakdown Voltage  
Drain Current  
70V  
±20V  
DSS  
GSS  
I
25A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab encourages customers to verify that datasheets are current before placing orders.  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
Docuemnt Number 3321  
Issue 1  
E-mail: sales@semelab.co.uk  
Website: http://www.semelab.co.uk  

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