Datasheet > D10-28

D10-28

更新时间： 2024-01-03 00:30:47

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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D10-28 数据手册

D10-28

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .280 4L STUD

DESCRIPTION:

The ASI D10-28 is Designed for

General Purpose UHF Amplifier

Applications up to 1200 MHz.

45°

FEATURES:

• P_G= 5.2 dB Typ. at 10 W/960 MHz

• Emitter Ballasting for Ruggedness

• Omnigold™ Metallization System

#8-32 UNC

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

1.0 A

30 V

I_C

V_CEO

P_DISS

T_J

20 W @ T_C= 25 °C

-65 to +200 °C

-65 to +150 °C

8.8 ^OC/W

.572 / 14.53

.130 / 3.30

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

BV_CES

BV_EBO

I_CBO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 10 mA

I_E= 5.0 mA

V_CE= 28 V

V_CE= 5.0 V

4.0

250

150

µA

---

h_FE

I_C= 100 mA

P_OUT= 10 W

C_CB

_CB= 28 V

_CE= 28 V

f = 1.0 MHz

f = 960 MHz

5.2

P_G

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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