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CZRT55C13-G PDF预览

CZRT55C13-G

更新时间: 2024-12-01 04:13:31
品牌 Logo 应用领域
上华 - COMCHIP 二极管齐纳二极管测试
页数 文件大小 规格书
4页 101K
描述
Surface Mount Zener Diodes

CZRT55C13-G 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.78
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:30 ΩJESD-609代码:e3
元件数量:1最高工作温度:150 °C
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
标称参考电压:13 V子类别:Voltage Reference Diodes
表面贴装:YES端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:30最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

CZRT55C13-G 数据手册

 浏览型号CZRT55C13-G的Datasheet PDF文件第2页浏览型号CZRT55C13-G的Datasheet PDF文件第3页浏览型号CZRT55C13-G的Datasheet PDF文件第4页 
Surface Mount Zener Diodes  
CZRT55C2V4-G thru CZRT55C39-G  
Voltage: 2.4 ~ 29 Volts  
Power: 410 mW  
Features:  
Planar Die Constructions  
SOT-23  
500mW Power Dissipation  
.119 (3.0)  
.110 (2.8)  
Top View  
Zener Voltages from 2.4V ~ 39V  
.020 (0.5)  
Ideally Suited for Automated Assembly Processes  
.056 (1.40)  
.047 (1.20)  
Mechanical Data:  
Case: SOD-23, Plastic  
Terminals: Solderable per MIL-STD-202, Method 208  
Approx. Weight: 0.008 gram  
.037 (0.95) .037 (0.95)  
Circuit Schematic:  
.103 (2.6)  
.086 (2.2)  
.029(0.5)  
.020 (0.5)  
Dimensions in inches (millimeters)  
Maximum Ratings and Thermal Characterics  
Parameter  
Symbols  
Value  
Units  
Power Dissipation (Note A) at 75oC  
PD  
410  
mW  
Peak Forward Surge Current Surge, 8.3ms Single  
Half Sine-Wave Superimposed on Rated Load  
(JEDEC Method) (Note B)  
IFSM  
2
Amps  
oC  
Operating Junction and Storage Temperature Range  
TJ  
-55 to +150  
Notes:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  
“-G” suffix designated RoHS compliant version  
.
.
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Page1  
Comhip Technology Corporation Tel:510-657-8671 Fax: 657-8921 www.comchiptech.com  

CZRT55C13-G 替代型号

型号 品牌 替代类型 描述 数据表
BZX84C13-7-F DIODES

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350mW SURFACE MOUNT ZENER DIODE

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