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CZRT55C33 PDF预览

CZRT55C33

更新时间: 2024-11-17 22:50:39
品牌 Logo 应用领域
上华 - COMCHIP 二极管齐纳二极管
页数 文件大小 规格书
4页 71K
描述
Surface Mount Zener Diodes

CZRT55C33 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.88
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:80 ΩJESD-609代码:e0
元件数量:1最高工作温度:150 °C
最大功率耗散:0.41 W标称参考电压:33 V
子类别:Voltage Reference Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

CZRT55C33 数据手册

 浏览型号CZRT55C33的Datasheet PDF文件第2页浏览型号CZRT55C33的Datasheet PDF文件第3页浏览型号CZRT55C33的Datasheet PDF文件第4页 
Surface Mount Zener Diodes  
COMCHIP  
www.comchip.com.tw  
CZRT55C4V7 Thru CZRT55C39  
Voltage: 2.4 - 39 Volts  
Power: 410 mWatts  
Features  
Planar Die construction  
SOT-23  
410mW Power Dissipation  
.119 (3.0)  
Zener Voltages from 2.4V - 39V  
.110 (2.8)  
Ideally Suited for Automated Assembly  
Processes  
.020 (0.5)  
Top View  
3
Mechanical data  
Case: SOT-23, Plastic  
1
2
Terminals: Solderable per MIL-STD-202,  
Method 208  
.037(0.95)  
.037(0.95)  
Approx. Weight: 0.008 gram  
SINGLE  
.103 (2.6)  
.086 (2.2)  
.020 (0.5) .020 (0.5)  
Dimensions in inches (millimeters)  
CDST4148  
Maximum Ratings and Electrical Characterics  
Parameter  
Symbol  
Value  
Units  
PD  
Power Dissipation (Note A) at 75°C  
410  
mW  
Peak Forward Surge Current Surge, 8.3ms Single  
Half Sine-wave Superimposed on Rated Load  
(JEDEC Method) (Note B)  
IFSM  
TJ  
2.0  
Amps  
Operating Junction and Storage Temperature Range  
-55 to +150  
°C  
NOTES:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  
Page 1  
MDS0211014A  

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