Datasheet > CYM1464PD-22C

CYM1464PD-22C

更新时间： 2024-01-02 03:39:39

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
8页	191K
描述
512Kx8 Static RAM Module

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CYM1464PD-22C 数据手册

CYM1464

512Kx8 Static RAM Module

constructed using four 256K x 4 static RAMs in SOJ packages

mounted on an epoxy laminate substrate with pins.

Features

• High-density 4-megabit SRAM module

• High-speed CMOS SRAMs

— Access time of 20 ns

Writing to the module is accomplished when the chip select

(CS) and write enable (WE) inputs are both LOW. Data on the

eight input/output pins (I/O₀through I/O₇) of the device is writ-

ten into the memory location specified on the address pins (A₀

through A₁₈). Reading the device is accomplished by taking

chip select and output enable (OE) LOW, while write enable

(WE) remains inactive or HIGH. Under these conditions, the

contents of the memory location specified on the address pins

(A₀through A₁₈) will appear on the eight appropriate data in-

put/output pins (I/O₀through I/O₇).

• Low active power

— 1.93W (max.)

• JEDEC-compatible pinout

• 32-pin, 0.6-inch-wide DIP package

• TTL-compatible inputs and outputs

• Low profile

The input/output pins remain in a high-impedance state unless

the module is selected, outputs are enabled, and write enable

(WE) is HIGH.

— Max. height of 0.34 inches

Functional Description

The CYM1464 is a high-performance 4-megabit static RAM

module organized as 512K words by 8 bits. This module is

Logic Block Diagram

Pin Configuration

DIP

Top View

A − A

256K x 4

SRAM

256K x 4

SRAM

I/O

1 OF 2

DECODER

256K x 4

SRAM

256K x 4

SRAM

GND

I/O₀− I/O₇

Selection Guide

1464-20

1464-22

1464-25

1464-30

1464-35

1464-45

1464-55

Maximum Access Time (ns)

Maximum Operating Current (mA)

Maximum Standby Current (mA)

350

240

350

300

240

Cypress Semiconductor Corporation

Document #: 38-05272 Rev. **

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

Revised March 15, 2002

12 3 4 5 6 7 8

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