Datasheet > CYDD04S72V18-167BBXC

CYDD04S72V18-167BBXC

更新时间： 2024-11-24 19:47:59

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
48页	1053K
描述
Dual-Port SRAM, 64KX72, 11ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-484

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CYDD04S72V18-167BBXC 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD FREE, PLASTIC, BGA-484
针数：	484	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.84	最长访问时间：	11 ns
其他特性：	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATE AT 1.8V.	JESD-30 代码：	S-PBGA-B484
JESD-609代码：	e1	长度：	23 mm
内存密度：	4718592 bit	内存集成电路类型：	DUAL-PORT SRAM
内存宽度：	72	湿度敏感等级：	3
功能数量：	1	端子数量：	484
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	64KX72
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	SQUARE	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	2.16 mm
最大供电电压 (Vsup)：	1.58 V	最小供电电压 (Vsup)：	1.42 V
标称供电电压 (Vsup)：	1.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	宽度：	23 mm
Base Number Matches：	1

CYDD04S72V18-167BBXC 数据手册

浏览型号CYDD04S72V18-167BBXC的Datasheet PDF文件第2页

浏览型号CYDD04S72V18-167BBXC的Datasheet PDF文件第3页

浏览型号CYDD04S72V18-167BBXC的Datasheet PDF文件第4页

浏览型号CYDD04S72V18-167BBXC的Datasheet PDF文件第5页

浏览型号CYDD04S72V18-167BBXC的Datasheet PDF文件第6页

浏览型号CYDD04S72V18-167BBXC的Datasheet PDF文件第7页

PRELIMINARY

FullFlex™ Synchronous

DDR Dual-Port SRAM

— Selectable LVTTL (3.3V), Extended HSTL

(1.4V–1.9V), 1.8V LVCMOS, or 2.5V LVCMOS I/O on

each port

Features

• True dual-ported memory allows simultaneous access

to the shared array from each port

— Burst counters for sequential memory access

— Mailbox with interrupt flags for message passing

— Dual Chip Enables for easy depth expansion

• Synchronous pipelined operation with selectable

Double Data Rate (DDR) or Single Data Rate (SDR)

operation on each port

— DDR SRAM interface (data transferred at 400 Mbps)

Functional Description

@ 200 MHz

The FullFlex Dual-Port SRAM families consist of 4-Mbit,

9-Mbit, 18-Mbit, and 36-Mbit synchronous, true dual-port static

RAMs that are high-speed, low-power 1.8V/1.5V CMOS. Two

ports are provided, allowing the array to be accessed simulta-

neously. Simultaneous access to a location triggers determin-

istic access control. For FullFlex72, these ports can operate

independently in DDR mode with 36-bit bus widths or in SDR

mode with 72-bit bus widths. For FullFlex36 and FullFlex18,

the ports operate in DDR mode only. Each port can be

independently configured for two pipeline stages for SDR

mode or 2.5 stages in DDR mode. Each port can also be

configured to operate in pipeline or flow-through mode in SDR

mode.

Advanced features include built-in deterministic access

control to manage address collisions during simultaneous

access to the same memory location, variable impedance

Matching (VIM) to improve data transmission by matching the

output driver impedance to the line impedance, and echo

clocks to improve data transfer.

— SDR interface at 250 MHz

— Up to 36-Gb/s bandwidth (250 MHz * 72 bit * 2 ports)

• Selectable pipeline or flow-through mode

• Selectable 1.5V or 1.8V core power supply

• Commercial and Industrial temperature ranges

• IEEE 1149.1 JTAG boundary scan

• Available in 484-ball PBGA Packages and 256-ball

FBGA Packages

• FullFlex72 family

— 36 Mbit: 512K x 72 (CYDD36S72V18)

— 18 Mbit: 256K x 72 (CYDD18S72V18)

— 9 Mbit: 128K x 72 (CYDD09S72V18)

— 4 Mbit: 64K x 72 (CYDD04S72V18)

• FullFlex36 family

— 36 Mbit: 512K x 72 (CYDD36S36V18)

— 18 Mbit: 256K x 72 (CYDD18S36V18)

— 9 Mbit: 128K x 72 (CYDD09S36V18)

— 4 Mbit: 64K x 72 (CYDD04S36V18)

• FullFlex18 family

— 36 Mbit: 1M x 36 (CYDD36S18V18)

— 18 Mbit: 512K x 36 (CYDD18S18V18)

— 9 Mbit: 256K x 36 (CYDD09S18V18)

— 4 Mbit: 128K x 36 (CYDD04S18V18)

To reduce the static power consumption, chip enables can be

used to power down the internal circuitry. The number of

cycles of latency before a change in CE0 or CE1 will enable

or disable the databus matches the number of cycles of read

latency selected for the device. In order for a valid write or read

to occur, both chip enable inputs on a port must be active.

Each port contains an optional burst counter on the input

address register. After externally loading the counter with the

initial address, the counter will increment the address inter-

nally.

Additional features of this device include a mask register and

mirror register to control counter increments and

• Built-in deterministic access control to manage

wrap-around, counter-interrupt (CNTINT) flags to notify that

the counter will reach the maximum value on the next clock

cycle, readback of the burst-counter internal address, mask

retransmit functionality, mailbox interrupt flags for message

passing, JTAG for boundary scan, and asynchronous Master

Reset (MRST). The logic block diagram in Figure 1 displays

these features.

address collisions

— Deterministic flag output upon collision detection

— Collision detection on back-to-back clock cycles

— First Busy Address readback

• Advanced features for improved high-speed data

transfer and flexibility

— Variable impedance Matching (VIM)

— Echo clocks

The FullFlex72 DDR family of devices is offered in a 484-ball

plastic BGA package. The FullFlex36 and FullFlex18 DDR

only families of devices are offered in a 256-ball fine pitch BGA

package.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document #: 38-06072 Rev. *E

Revised October 11, 2005

12 3 4 5 6 7...48

中文翻译

下载PDF

与CYDD04S72V18-167BBXC相关器件

型号	品牌	获取价格	描述	数据表
CYDD04S72V18-167BBXI	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 11ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD
CYDD04S72V18-167BGI	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 9ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLASTI
CYDD04S72V18-167BGXC	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 9ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD F
CYDD04S72V18-167BGXI	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 9ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD F
CYDD04S72V18-200BBC	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 9ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLASTI
CYDD04S72V18-200BBI	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 9ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLASTI
CYDD04S72V18-200BGXC	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 7.2ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, LEAD
CYDD04S72V18-250BBC	CYPRESS	获取价格	Dual-Port SRAM, 64KX72, 7.2ns, CMOS, PBGA484, 23 X 23 MM, 2.03 MM HEIGHT, 1 MM PITCH, PLAS
CYDD09S18V18-167BBC	CYPRESS	获取价格	Dual-Port SRAM, 256KX36, 9ns, CMOS, PBGA256, 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256
CYDD09S18V18-167BBI	CYPRESS	获取价格	Dual-Port SRAM, 256KX36, 9ns, CMOS, PBGA256, 17 X 17 MM, 1 MM PITCH, MO-192, FBGA-256

与CYDD04S72V18-167BBXC相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

CYDD04S72V18-167BBXC

CYDD04S72V18-167BBXC 技术参数

CYDD04S72V18-167BBXC 数据手册

与CYDD04S72V18-167BBXC相关器件

与CYDD04S72V18-167BBXC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CYDD04S72V18-167BBXC

CYDD04S72V18-167BBXC 技术参数

CYDD04S72V18-167BBXC 数据手册

与CYDD04S72V18-167BBXC相关器件

与CYDD04S72V18-167BBXC相关文章

您还可以找

您在本页遇到什么问题？