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CY7C276-25JC PDF预览

CY7C276-25JC

更新时间: 2024-01-30 05:49:20
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路可编程只读存储器OTP只读存储器
页数 文件大小 规格书
11页 323K
描述
16K x 16 Reprogrammable PROM

CY7C276-25JC 技术参数

生命周期:Obsolete零件包装代码:LCC
包装说明:WQCCN, LCC44,.65SQ针数:44
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.82
Is Samacsys:N最长访问时间:25 ns
I/O 类型:COMMONJESD-30 代码:S-CQCC-N44
长度:16.51 mm内存密度:262144 bit
内存集成电路类型:UVPROM内存宽度:16
功能数量:1端子数量:44
字数:16384 words字数代码:16000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:16KX16
输出特性:3-STATE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:WQCCN封装等效代码:LCC44,.65SQ
封装形状:SQUARE封装形式:CHIP CARRIER, WINDOW
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:2.794 mm最大待机电流:0.2 A
子类别:EPROMs最大压摆率:0.2 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUAD宽度:16.51 mm
Base Number Matches:1

CY7C276-25JC 数据手册

 浏览型号CY7C276-25JC的Datasheet PDF文件第1页浏览型号CY7C276-25JC的Datasheet PDF文件第2页浏览型号CY7C276-25JC的Datasheet PDF文件第4页浏览型号CY7C276-25JC的Datasheet PDF文件第5页浏览型号CY7C276-25JC的Datasheet PDF文件第6页浏览型号CY7C276-25JC的Datasheet PDF文件第7页 
CY7C276  
Selection Guide  
CY7C276-25  
CY7C276-30  
Unit  
ns  
Maximum Access Time  
25  
30  
Maximum Operating  
Current  
Commercial  
175  
175  
mA  
Maximum Rati
DC Program Voltage .................................................... 13.0V  
UV Erasure................................................... 7258 Wsec/cm2  
(Above which be impaired. For user guide-  
lines, not te
Static Discharge Voltage............................................ >2001V  
(per MIL-STD-883, Method 3015)  
Storage ........... –65°C to+150°C  
Ambien
Latch-Up Current..................................................... >200 mA  
Power ..........5°C to+125°C  
Supply Vound P–0.5V to+7.0V  
Operating Range  
Ambient  
Temperature  
DC Voltage Applied to O
in High Z State .......................5V toV  
Range  
VCC  
Commercial  
0°C to +70°C  
5V ±10%  
DC Input Voltage................0V to +V  
Electrical Characteristics[2,
CY7C276-25  
CY7C276-30  
Parameter  
VOH  
VOL  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Level  
onditions  
Min.  
Max.  
Unit  
V
VmA  
2.4  
V0 mA 0 mA Mil)  
Guput Loal HIGH Voltage fol Inputs  
Guaranteed Inpuogical LOW Voltagor Aluts  
GND < VIN <
0.4  
VCC  
0.8  
V
VIH  
2.0  
–3.0  
–10  
V
VIL  
Input LOW Level  
V
IIX  
Input Leakage Current  
Input Clamp Diode Voltage  
Output Leakage Current  
+10  
µA  
µA  
µA  
VCD  
IOZ  
Note 2  
VCC = Max., VOL < OUT < OH  
Output Disabled  
,
+40  
IOS  
ICC  
Output Short Circuit Current VCC = Max., VOUT = 0.0V
–20  
90  
1
mA  
mA  
Power Supply Current VCC = Max., IOUT = 0.0 mA  
m’l  
Capacitance[2]  
Parameter  
CIN  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
Max.  
Unit  
TA = 25°C, f = 1 MHz,  
VCC = 5.0V  
10  
pF  
pF  
COUT  
Notes:  
1. The voltage on any input or I/O pin cannot exceed the power pin during power-up.  
2. See Introduction to CMOS PROMs in this Data Book for general information on testing.  
3. See the last page of this specification for Group A subgroup testing information.  
4. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.  
Document #: 38-04004 Rev. *C  
Page 2 of 10  
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CY7C276-25JC 替代型号

型号 品牌 替代类型 描述 数据表
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